1.

Conference Proceedings
Conference Proceedings
1. PERFORMANCE IMPROVEMENTS OF MOLTEN CARBONATE FUEL CELLS AND STACKS APPLYING Li/Na ELECTROLYTE
Watanabe, T. ; Toshiba, F. ; Morita, H. ; Yoshikawa, M. ; Mugikisra, V.
Pub. info.: Carbonate fuel cell technology : proceedings of the fifth international symposium.  pp.178-188,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-20
2.

Conference Proceedings
Conference Proceedings
2. Analysis of Performance of Molten Carbonate Fuel Cell at 44.5 Atmospheric Pressure
Yoshikawa, M. ; Mugikura, Y. ; Izaki, Y. ; Watanabe, T.
Pub. info.: Proceedings of the Symposium on Energy and Electrochemical Processing for a Cleaner Environment.  pp.209-216,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-28
3.

Conference Proceedings
Conference Proceedings
3. Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
Ohnuma, T. ; Tsuchida, H. ; Jikimoto, T. ; Miyashita, A. ; Yoshikawa, M.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.573-576,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
Yoshikawa, M. ; Morita, Y. ; Itoh, H. ; Nashiyama, I. ; Okumura, H. ; Misawa, S. ; Yoshida, S.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.797-802,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
5.

Conference Proceedings
Conference Proceedings
5. LATTICE MATCHING IN HgCdTe-CdZnTe HETEROJUNCTIONS
Maekawa, T. ; Saito, T. ; Yoshikawa, M. ; Takigawa, H.
Pub. info.: Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.109-114,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 56
6.

Conference Proceedings
Conference Proceedings
6. ANTIPHASE DOMAIN STRUCTURES OF CdTe ON SAPPHIRE SUBSTRATES
Maruyama, K. ; Yoshikawa, M. ; Takigawa, H.
Pub. info.: Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A..  pp.275-280,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 94
7.

Conference Proceedings
Conference Proceedings
7. Orbital evolution of the MUSES-C mission target: (25143) 1998 SF36
Yoshikawa, M.
Pub. info.: Proceedings of asteroids, comets, meteors : ACM 2002 : 29 July -2 August 2002, Technical University Berlin, Berlin, Germany.  pp.331-334,  2002.  Noordwijk.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 500
8.

Conference Proceedings
Conference Proceedings
8. HOMOEPITAXIAI GROWTH OF DIAMOND ON POLISHED CVD DIAMOND
Tzeng, Y. ; Wei, J. ; Hirata, A. ; Yang, C.F. ; Tokura, H. ; Yoshikawa, M.
Pub. info.: Proceedings of the Third International Symposium on Diamond Materials.  pp.322-327,  1993.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-17
9.

Conference Proceedings
Conference Proceedings
9. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K. K. ; Iwami, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
Hijikata, Y. ; Yaguchi, H. ; Ishida, Y. ; Yoshikawa, M. ; Kamiya, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1341-1344,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
11.

Conference Proceedings
Conference Proceedings
11. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K.K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. SIMS Analyses of SiO2/4H-SiC(0001) Interface
Yamashita, K. ; Kitabatake, M. ; Kusumoto, O. ; Takahashi, K. ; Uchida, M. ; Miyanaga, R. ; Itoh, H. ; Yoshikawa, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1037-1040,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1033-1036,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
Yoshikawa, M. ; Ohshima, T. ; Itoh, H. ; Takahashi, K. ; Kitabatake, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.635-638,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
18.

Conference Proceedings
Conference Proceedings
18. MISFIT DISLOCATIONS IN HgCdTe-CdTe HETEROJUNCTIONS
Takigawa, H. ; Yoshikawa, M. ; Ito, M. ; Maruyama, K.
Pub. info.: Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.97-102,  1985.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 37
19.

Conference Proceedings
Conference Proceedings
19. Effect of Cold Working and Aging on High Temperature Deformation of High Mn Stainless Steel
Yoshikawa, M. ; Matsuki, R. ; Habara, Y. ; Aoyama, H.
Pub. info.: High nitrogen steels '98 : proceedings of the 5th International Conference on High Nitrogen Steels, held in Espoo, Finland, May 24-26, and Stockholm, Sweden, May 27-28, 1998.  pp.421-426,  1999.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 318-320
20.

Conference Proceedings
Conference Proceedings
20. X-Ray Stress Measurement Using Whole Back Diffraction Ring
Ohya, S. I. ; Akita, K. ; Shitaba, Y. ; Yoshikawa, M.
Pub. info.: Residual stresses VII : ICRS 7 : proceedings of the 7th International Conference on Residual Stresses, ICRS-7 Xi'an, China, 14-17, June, 2004.  pp.137-142,  2005.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 490-491
21.

Conference Proceedings
Conference Proceedings
21. Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Ohshima, T. ; Yoshikawa, M. ; Itoh, H. ; Kojima, K. ; Okada, S. ; Nashiyama, I.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1299-1302,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
22.

Conference Proceedings
Conference Proceedings
22. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
23.

Conference Proceedings
Conference Proceedings
23. Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition
Kojima, K. ; Yoshikawa, M. ; Ohshima, T. ; Itoh, H. ; Okada, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1239-1242,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
24.

Conference Proceedings
Conference Proceedings
24. SIMS Analyses of SiO2/4H-SiC(0001) Interface
Yamashita, K. ; Kitabatake, M. ; Kusumoto, O. ; Takahashi, K. ; Uchida, M. ; Miyanaga, R. ; Itoh, H. ; Yoshikawa, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1037-1040,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Quality Improvement of Rapidly Solidified Magnesium Alloy by Plastic Processing
Yoshikawa, M. ; Kohzu, M. ; Watanabe, H. ; Higashi, K.
Pub. info.: Magnesium alloys 2003 : proceedings of the Second Osaka International Conference on Platform Science and Technology for Advanced Magnesium Alloys 2003, Osaka, Japan, 26-30, January, 2003.  pp.769-776,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 419-422
27.

Conference Proceedings
Conference Proceedings
27. Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions
Ohshima, T. ; Itoh, H. ; Yoshikawa, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.575-578,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
28.

Conference Proceedings
Conference Proceedings
28. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K.K. ; Iwami, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Reflection High-Energy Positron Diffraction: Solved and Unsolved Problems
Kawasuso, A. ; Kojima, K. ; Yoshikawa, M. ; Itoh, H. ; Okada, S. ; Ichimiya, A.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.445-447,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
30.

Conference Proceedings
Conference Proceedings
30. Investigation of SiO2/SiC Interface using Positron Annihilation Technique
Maekawa, M. ; Kawasuso, A. ; Yoshikawa, M. ; Ichimiya, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1301-1304,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
31.

Conference Proceedings
Conference Proceedings
31. Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
Maekawa, M. ; Kawasuso, A. ; Yoshikawa, M. ; Ichimiya, A.
Pub. info.: Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003.  pp.144-146,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 445-446
32.

Conference Proceedings
Conference Proceedings
32. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Kojima, K. ; Ohshima, T. ; Itoh, H. ; Okada, S. ; Ishida, Y.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1129-1132,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
34.

Conference Proceedings
Conference Proceedings
34. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
Ohshima, T. ; Lee, K.K. ; Ishida, Y. ; Kojima, K. ; Tanaka, Y. ; Takahashi, T. ; Yoshikawa, M. ; Okumura, H. ; Arai, K. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1405-1408,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
35.

Conference Proceedings
Conference Proceedings
35. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1033-1036,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
36.

Conference Proceedings
Conference Proceedings
36. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
Kawasuso, A. ; Yoshikawa, M. ; Maekawa, M. ; Itoh, H. ; Chiba, T. ; Redmann, F. ; Krause-Rehberg, R. ; Weidner, M. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.477-480,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
38.

Conference Proceedings
Conference Proceedings
38. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K. K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation
Maekawa, M. ; Kawasuso, A. ; Yoshikawa, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.559-562,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
40.

Conference Proceedings
Conference Proceedings
40. Wide-field NEO survey 1.0-m telescope with 10 2k × 4k mosaic CCD camera
Isobe, S. ; Asami, A. ; Asher, D.J ; Hashimoto, N. ; Nakano, S. ; Nishiyama, K. ; Ohshima, Y. ; Terazono, J. ; Umehara, H. ; Yoshikawa, M.
Pub. info.: Survey and other telescope technologies and discoveries : 27-28 August 2002, Waikoloa, Hawaii, USA.  pp.83-87,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4836
41.

Technical Paper
Technical Paper
41. Development of a Method to Predict the Rupture of Spot Welds in Vehicle Crash Analysis.
Yoda, S. ; Kumagai, K. ; Yoshikawa, M. ; Tsuji, M.
Pub. info.: 2006 SAE world congress : technical paper.  2006.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2006
42.

Conference Proceedings
Conference Proceedings
42. Vibrational relaxation of excited states in a series of carotenes with several polyene lengths
Yoshikawa, M. ; Hashimoto, H.
Pub. info.: Nonlinear Spectroscopy.  pp.15-23,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4812
43.

Conference Proceedings
Conference Proceedings
43. Shot number estimation for EB direct writing for logic LSI utilizin character-build standard-cell layout technique [6283-56]
Kajiya, Y. ; Nakamura, A. ; Yoshikawa, M. ; Fujino, T.
Pub. info.: Photomask and Next-Generation Lithography Mask Technology XIII.  pp.62832M-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6283
44.

Conference Proceedings
Conference Proceedings
44. Character-build standard-cell layout technique for high-throughput character-projection EB lithography [5853-102]
Fujino, T. ; Kajiya, Y. ; Yoshikawa, M.
Pub. info.: Photomask and Next-Generation Lithography Mask Technology XII.  pp.160-167,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5853