Blank Cover Image

A TITANIUM SALICIDE PROCESS SUITABLE FOR SUBMICRON CMOS APPLICATIONS

Author(s):
Publication title:
Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
320
Pub. Year:
1994
Page(from):
53
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992191 [1558992197]
Language:
English
Call no.:
M23500/320
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology

Ho,C.S., Pey,K.L., Wong,H., Karunasiri,R.P.G., Chua,S.J., Lee,K.H., Tang,Y., Wong,S.M., Chan,L.H.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Nickel SALICIDE Technology for Sub-100 nm CMOS Devices

Lu, J.P., Miles, D., Li-Fatou, A., Xu, Y.Q., Zhao, J., Gurba, A., Griffin, A., Jr., Hornug, B., Hewson, M., Grider, T., …

Electrochemical Society
2 Conference Proceedings Integration of NiSi Salicide for Deep Submicron CMOS Technologies

Lin, X. W., Ibrahim, N., Topete, L., Pramanik, D.

MRS - Materials Research Society
8 Conference Proceedings Development of CMOS active pixel image sensors suitable for space applications: some preliminary results

J. Solhusvik, C. Bellitto, C. Cavadore, A. Bourricaud, J.A. Farré

Society of Photo-optical Instrumentation Engineers
3 Conference Proceedings Impact of nitrogen ion implantation on deep submicron SALICIDE process

Lim,C.W,, Lahiri,S.K., Tung,C.H., Wong,S.M., Lee,K.H., Wong,H., Pey,K.L., Chan,L.H.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings SOI Technology for Deep-Submicron CMOS Applications,

Colinge, J.-P.

Electrochemical Society
4 Conference Proceedings Optimizing a manufacturing submicron CMOS process for low-voltage applications

Ma,J., Cheng,S., Pryor,B., Klein,K.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings 25 Design of experiment on the Co salicide process: impact of thickness and anneals on main CMOS Parameters

Wacquant, F., Regnier, C., Basso, M.-T., Julien, C., Huinhert, A., lenny, C.

Electrochemical Society
5 Conference Proceedings Evaluation of Mo-doped Ti salicide process for sub-0.18-ｦﾌm CMOS

Chao,C.-P., Kittl,J.A., Hong,Q.-Z., Shiau,W.-T., Rodder,M., Chen,I.-C.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings IMPACT OF VARIOUS POLYSILICON DEPOSITION PROCESS ON THIN GATE-OXIDE PROPERTIES IN SUBMICRON CMOS TECHNOLOGY

Rot, P. K., Kook, T., Kannan, V. C., Felton, G. J., Powell, R. A., Velaga, A. N.

Materials Research Society
6 Conference Proceedings Realization of Diffusion to Poly Capacitor in SALICIDE Based CMOS Process

Pandey,S.M., Jain,H., Pal,D.K., Roy,J.N.

SPIE - The International Society for Optical Engineering
12 Conference Proceedings Investigation of salicide processes for thin film SOI microwave applications

Chen, J., Colinge, J.P., Flandre, D., Gillon, R., Raskin, J.P., Vanhoenacker, D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12