1.

Conference Proceedings
Conference Proceedings
1. Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
L. Yuan ; Y.M. Zhang ; Q.W. Song ; X.Y. Tang
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.818-821,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
H. Yuan ; Q.W. Song ; X.Y. Tang ; Y.M. Zhang ; H. Guo
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.986-992,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
H. Yuan ; X.Y. Tang ; Y.M. Zhang ; H.L. Lv
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.812-815,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics
Q.W. Song ; Y.M. Zhang ; X.Y. Tang ; Y.H. Wang ; H. Yuan
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.906-909,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
S. Yang ; Q.W. Song ; X.Y. Tang ; Y.M. Zhang ; H. Yuan ; Q.J. Sun
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.431-434,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897