1.

Conference Proceedings
Conference Proceedings
1. Impact of Phonon-Limited Mobility Superiority in Double-Gate or Fin FET with a (111) Si and (001) Ge Surface Channel on Device Scaling
T. Yamamura ; S. Sato ; Y. Omura
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.369-374,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
2.

Conference Proceedings
Conference Proceedings
2. Origin of Transient Gate Current Observed in Pseudo-MOS Transistor
S. Sato ; T. Nguyen ; S. Cristoloveanu ; Y. Omura
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.95-100,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)