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10 results

Conference Proceedings

1. Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

B. Krishnan ; H. Das ; H.D. Lin ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.149-152, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

R.V.K.G. Thirumalai ; B. Krishnan ; A. Davydov ; J.N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.209-212, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

H. Das ; B. Krishnan ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.163-166, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

4. Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

B. Krishnan ; S.P. Kotamraju ; G. Melnychuk ; N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.581-584, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

5. Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

B. Krishnan ; R.V.K.G. Thirumalai ; S.P. Kotamraju ; J.N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.133-136, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

6. Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors

S.P. Kotamraju ; B. Krishnan ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.103-106, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

7. Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

S.P. Kotamraju ; B. Krishnan ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.111-114, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition

B. Krishnan ; S.P. Kotamraju ; S.G. Sundaresan ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.187-192, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

9. Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques

B. Krishnan ; S.K. Chanda ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.411-414, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

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Conference Proceedings

10. 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

B. Krishnan ; J.N. Merrett ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.925-928, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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