1.

Conference Proceedings
Conference Proceedings
1. Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology
Y. Kim ; Z. Ye ; A. Zojaji ; A. Lam ; E. Sanchez
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.467-471,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. Integrating Selective Epitaxy in Advanced Logic & Memory Devices
S. Kuppurao ; Y. Kim ; Y. Cho ; S. Chopra ; Z. Ye
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.415-425,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
3.

Conference Proceedings
Conference Proceedings
3. Heavily Phosphorus Doped Silicon Junctions for nMOS Applications
S. Chopra ; Z. Ye ; A. Zojaji ; Y. Kim ; S. Kuppurao
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.307-312,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
4.

Conference Proceedings
Conference Proceedings
4. Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties
Y. Kim ; Z. Ye ; A. Lam ; A. Zojaji ; Y. Cho ; S. Kuppurao
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.409-418,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)