1.

Conference Proceedings
Conference Proceedings
1. Transistor Design Methodology for Low Power CMOS Microprocessors
Buller, J.F. ; Cheek, J. ; Wristers, D.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.289-296,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-2
2.

Conference Proceedings
Conference Proceedings
2. 'Deep' Junction Integration for Improved Performance and Manufacturability
Cheek, J. ; Buller, J. ; Wristers, D.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.275-280,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
3.

Conference Proceedings
Conference Proceedings
3. Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing
Bhat, M. ; Yoon, G.W. ; Kim, J. ; Han, L,K. ; Yan, J. ; Wristers, D. ; Kwong, D.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.317-327,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
4.

Conference Proceedings
Conference Proceedings
4. Recent Developments in Ultratlsin Nitride Gate Stack Prepared by In-Situ RTP Multiprocessing for CMOS ULSI
Song, S.C. ; Kini, B.Y. ; Loan, H.F. ; Kwong, D.-L. ; Gardner, M. ; Fulford, J. ; Wristers, D. ; Gelpey, J. ; Marcus, S.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.45-56,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
5.

Conference Proceedings
Conference Proceedings
5. High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP
Han, L. K. ; Bhat, M. ; Yan, J. ; Wristers, D. ; Kwong, D. L.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.221-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
6.

Conference Proceedings
Conference Proceedings
6. Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection
Chen, Y. Y. ; Gardner, M. ; Fulford, J. ; Wristers, D. ; Joshi, A. B. ; Kwong, D. L.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.283-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
7.

Conference Proceedings
Conference Proceedings
7. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation
Wristers, D. ; Wang, H.H. ; Han, L.K. ; Lin, C. ; Chen, T.S. ; Kwong, D.L. ; Fulford, J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.733-743,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
8.

Conference Proceedings
Conference Proceedings
8. Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides
Kim, B.Y. ; Han, L.K. ; Wristers, D. ; Fulford, J. ; Kwong, D.-L.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.722-732,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1