1.

Conference Proceedings
Conference Proceedings
1. Europium Induced Deep Levels in Hexagonal Silicon Carbide
Pasold, G. ; Albrecht, F. ; Hulsen, C. ; Sielemann, R. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.659-662,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. ACCEPTOR AND DONOR IMPURITIES IN SEMICONDUCTORS STUDIED BY THE PAC-METHOD
Porkel, D. ; Fottinger, H. ; Iwatschenko-Borho, M. ; Meyer, F. ; Witthuhn, W. ; Wolf, H.
Pub. info.: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.481-486,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 46
3.

Conference Proceedings
Conference Proceedings
3. The electric field gradient in noncubic metals and alloys
Witthuhn, W. ; De, U. ; Engel, W. ; Hoth, S. ; Keitel, R. ; Klinger, W. ; Seebock, R.
Pub. info.: Nuclear and electron resonance spectroscopies applied to materials science : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.397-402,  1981.  New York, N.Y..  North Holland
Title of ser.: Materials Research Society symposia proceedings
Ser. no.: 3
4.

Conference Proceedings
Conference Proceedings
4. Investigation of lattice defects in HCP metals
Keitel, R. ; Engel, W. ; Hoth, S. ; Klinger, W. ; Seebock, R. ; Witthuhn, W.
Pub. info.: Nuclear and electron resonance spectroscopies applied to materials science : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.443-448,  1981.  New York, N.Y..  North Holland
Title of ser.: Materials Research Society symposia proceedings
Ser. no.: 3
5.

Conference Proceedings
Conference Proceedings
5. Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
Grillenberger, J. ; Achtziger, N. ; Pasold, G. ; Sielemann, R. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.475-478,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. Band Gap States of Cr in the Lower Part of the SiC Band Gap
Pasold, G. ; Achtziger, N. ; Grillenberger, J. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.471-474,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
Hulsen, C. ; Achtziger, N. ; Reislohner, U. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.929-932,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen
Achtziger, N. ; Hulsen, C. ; Janson, M. S. ; Linnarsson, M. K. ; Svensson, B. G. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.933-936,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
9.

Conference Proceedings
Conference Proceedings
9. On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
Achtziger, N. ; Grillenberger, J. ; Uhrmacher, M. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.749-752,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
10.

Conference Proceedings
Conference Proceedings
10. Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiC
Shishkin, Y. ; Choyke, W. J. ; Devaty, R. P. ; Achtziger, N. ; Opfermann, Th. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.639-642,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
11.

Conference Proceedings
Conference Proceedings
11. Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
Grillenberger, J. ; Achtziger, N. ; Pasold, G. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.573-576,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
Huelsen, C. ; Achtziger, N. ; Herold, J. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.331-334,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
13.

Conference Proceedings
Conference Proceedings
13. Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
Grossner, U. ; Grillenberger, J. ; Albrecht, F. ; Pasold, G. ; Sielemann, R. ; Svensson, B.G. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.791-796,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
14.

Conference Proceedings
Conference Proceedings
14. Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
Pasold, G. ; Albrecht, F. ; Hulsen, C. ; Sielemann, R. ; Zeitz, W.D. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.783-786,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
15.

Conference Proceedings
Conference Proceedings
15. Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
Grillenberger, J. ; Achtziger, N. ; Pasold, G. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.573-576,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
Pasold, G. ; Albrecht, F. ; Grillenberger, J. ; Grossner, U. ; Hulsen, C. ; Sielemann, R. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.487-490,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
17.

Conference Proceedings
Conference Proceedings
17. Radiotracer Spectroscopy on Group II Acceptors in GaN
Albrecht, F. ; Pasold, G. ; Grillenberger, J. ; Reisloehner, U. ; Dietrich, M. ; Witthuhn, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1609-1612,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460