1.

Conference Proceedings
Conference Proceedings
1. I-VM C-V AND HALL EFFECT STUDIES OF INDIUM-DOPED LPE GaAs
Chen, J. F. ; Xie, K. ; Wie, C. R.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.209-214,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. INTERFACE RECOMBINATION AND THRESHOLD CURRENT IN GRINSCH-QW AlGaAs/GaAs LASER DIODES
Xie, K. ; Kim, H. M. ; Wie, C. R. ; Varriano, J. A. ; Wicks, G. W.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.591-596,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C
Wie, C. R. ; Xie, K. ; Berdin, T. T. ; Fronko, J. G. ; Look, D. C. ; Evans, K. R. ; Stutz, C. E.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.383-388,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
4.

Conference Proceedings
Conference Proceedings
4. X-RAY AND RAMAN STUDIES OF MeV ION IMPLANTED GaInAs/GaAs
Wie, C. R. ; Xie, K. ; Burns, G. ; Dacol, F. H. ; Pettit, D. ; Woodall, J. M.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.499-504,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104