1.

Conference Proceedings
Conference Proceedings
1. Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED
Cartwright, A.N. ; Cheung, M.C-K. ; Shahedipour-Sandvik, F. ; Grandusky, J.R. ; Jamil, M. ; Jindal, V. ; Schujman, S.B. ; Schowalter, L.J. ; Wetzel, C. ; Li, P. ; Detchprohm, T. ; Nelson, J.S.
Pub. info.: Solid-state lighting materials and devices : symposium held April 18-19, 2006, San Francisco, California, U.S.A..  pp.77-90,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 916
2.

Conference Proceedings
Conference Proceedings
2. PROPERTIES OF GaInAsP ALLOYS INVESTIGATED BY OPTICALLY DETECTED MAGNETIC RESONANCE TECHNIQUES
Wetzel, C. ; Meyer, B.K. ; Grutzmacher, D. ; Omling, P.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.353-358,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorgonic chemical vapor deposition [6337-10]
Feng, Z. C. ; Chen, J. ; Tsai, H. ; Yang, J. ; Li, P. ; Wetzel, C. ; Detchprohm, T. ; Nelson, J. ; Ferguson, I. T.
Pub. info.: Sixth international conference on solid state lighting : 14-17 August 2006, San Diego, California, USA.  pp.63370D-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6337
4.

Conference Proceedings
Conference Proceedings
4. Electron-Phonon Scattering in Si-Doped GaN
Wetzel, C. ; Walukiewicz, W. ; Ager, J. W., III
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.567-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
Wetzel, C. ; Takeuchi, T. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.66.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
Amano, H. ; Iwaya, M. ; Hayashi N. ; Kashima, T. ; Katsuragawa, M. ; Takeuchi, T. ; Wetzel, C. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.1.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. X-ray Photoelectron Diffraction Measurements of Hexagonal GaN(0001) Thin Films
Denecke, R. ; Morais, J. ; Wetzel, C. ; Liesegang, J. ; Haller, E. E. ; Fadley, C. S.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.263-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
8.

Conference Proceedings
Conference Proceedings
8. *Spectroscopy in polarized and piezoelectric AlGaInN heterostructures
Wetzel, C. ; Takeuchi, T. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W12.4.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
9.

Conference Proceedings
Conference Proceedings
9. Localized Donors in GaN: Spectroscopy Using Large Pressures
Wetzel, C. ; Amano, H. ; Akasaki, I. ; Suski, T. ; Ager, J. W. ; Weber, E. R. ; Haller, E. E. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.489-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
10.

Conference Proceedings
Conference Proceedings
10. Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate
Amano, H. ; Takekuchi, T. ; Yamaguchi, S. ; Nitta, S. ; Kariya, M. ; Iwaya, M. ; Wetzel, C. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.479-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
11.

Conference Proceedings
Conference Proceedings
11. Discrete Steps in the Capacitance Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures
Xia, Y. ; Williams, E. ; Park, Y. ; Yilmaz, I. ; Shah, J. M. ; Schubert, E. F. ; Wetzel, C.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.233-238,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
12.

Conference Proceedings
Conference Proceedings
12. Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED
Amano, H. ; Iwaya, M. ; Nitta, S. ; Terao, S. ; Nakamura, R. ; Ukai, T. ; Saitoh, S. ; Kamiyama, S. ; Wetzel, C. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
13.

Conference Proceedings
Conference Proceedings
13. Identification of Transition Metals in GaN
Pressel, K. ; Heitz, R. ; Eckey, L. ; Loa, I. ; Thurian, P. ; Hoffmann, A. ; Meyer, B. K. ; Fischer, S. ; Wetzel, C. ; Haller, E. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.491-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
14.

Conference Proceedings
Conference Proceedings
14. Fine Structure of the 3.42 eV Emission Band in GaN
Fischer, S. ; Wetzel, C. ; Walukiewicz, W. ; Haller, E. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.571-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
15.

Conference Proceedings
Conference Proceedings
15. Defect Studies of GaN Under Large Hydrostatic Pressure
Wetzel, C. ; Fischer, S. ; Walukiewicz, W. ; Ager, J., III ; Haller, E. E. ; Grzegory, I. ; Porowski, S. ; Suski, T.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.417-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
16.

Conference Proceedings
Conference Proceedings
16. Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
Meyer, B. K. ; Volm, D. ; Wetzel, C. ; Eckey, L. ; Holst, J.-Ch. ; Maxim, P. ; Heitz, R. ; Hoffmann, A. ; Broser, I. ; Mokhov, E. N. ; Baranov, P. G. ; Qiu, C. ; Pankove, J. I.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.521-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
17.

Conference Proceedings
Conference Proceedings
17. Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure
Wetzel, C. ; Walukiewicz, W. ; Haller, E. E. ; Amano, H. ; Akasaki, I.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.509-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
18.

Conference Proceedings
Conference Proceedings
18. HIGH QUALITY INTERFACES IN a-Si:H/a-SiC:H SUPERLATTICES
Bernhard, N ; Kirsch, M. ; Eigenschenk, R. ; Bollu, M. ; Wetzel, C. ; M-ller. F. ; Schwarz, R.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.237-242,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
19.

Conference Proceedings
Conference Proceedings
19. Development of high-power green light emitting diode dies in piezoelectric GalnN/GaN (Invited Paper)
Wetzel, C. ; Xia, Y. ; Detchprohm, T. ; Li, P. ; Nelson, J.S.
Pub. info.: Light-Emitting Diodes: Research, Manufacturing, and Applications IX.  pp.1-6,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5739