1.

Conference Proceedings
Conference Proceedings
1. Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress
Li,M.-F. ; Yu,P.Y. ; Weber,E.R. ; Bauser,E. ; Hansen,W.L. ; Haller,E.E.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.853-858,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si
Li,M.F. ; Yu,P.Y. ; Shan,W. ; Hansen,W.L. ; Weber,E.R.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.851-856,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
Li,M.F. ; Shan,W. ; Yu,P.Y. ; Hansen,W.L. ; Weber,E.R. ; Bauser,E.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1103-1108,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41