1.

Conference Proceedings
Conference Proceedings
1. SURFACE FACETING OF (110) GaAs: ANALYSIS AND ELIMINATION
Parechianian-Allen, L. ; Weber, E. R. ; Washburn, J. ; Pao, Y. C.
Pub. info.: Characterization of defects in materials : symposium held December 1-2, 1986, Boston, Massachusetts, U.S.A..  pp.487-492,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 82
2.

Conference Proceedings
Conference Proceedings
2. THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE
Shih, Y. ; Washburn, J. ; Weber, E. R. ; Gronsky, R.
Pub. info.: Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.65-70,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 45
3.

Conference Proceedings
Conference Proceedings
3. THE INFLUENCE OF CURRENT STRESSING ON THE STRUCTURE OF Ag CONTACTS TO GaAs
Liliental-Weber, Z. ; Miret-Goutier, A. ; Newman, N. ; Jou, C. ; Spicer, W. E. ; Washburn, J. ; Weber, E. R.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.241-244,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
4.

Conference Proceedings
Conference Proceedings
4. Structural and Photoluminescence Studies of Er-Implanted LT-GaAs:Be
Maltez, R. L. ; Liliental-Weber, Z. ; Washburn, J. ; Behar, M. ; Klein, P. B. ; Specht, P. ; Weber, E. R.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.319-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
5.

Conference Proceedings
Conference Proceedings
5. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS
Liliental-Weber, Z. ; Weber, E. R. ; Washburn, J. ; Liu, T. Y. ; Kroemer, H.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.91-98,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
7.

Conference Proceedings
Conference Proceedings
7. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer
Ruvimov, S. ; Liliental-Weber, Z. ; Washburn, J. ; Kim, Y. ; Sudhir, G. S. ; Krueger, J. ; Weber, E. R.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.295-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572