1.

Conference Proceedings
Conference Proceedings
1. THE MICROSTRUCTURE OF ZrN/GaAs SCHOTTKY CONTACTS AND ITS CORRELATION WITH ELECTRICAL PROPERTIES
Phatak, Prashant ; Imaizumi, Mitsuru ; Weber, E. R. ; Newman, N. ; Liliental-Weber, Z.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.455-460,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. THE INFLUENCE OF CURRENT STRESSING ON THE STRUCTURE OF Ag CONTACTS TO GaAs
Liliental-Weber, Z. ; Miret-Goutier, A. ; Newman, N. ; Jou, C. ; Spicer, W. E. ; Washburn, J. ; Weber, E. R.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.241-244,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
3.

Conference Proceedings
Conference Proceedings
3. DEFFECTS IN GaAs BULK CRYSTALS AND MULTI-LAYERS CAUSED BY In DIFFUSION
Werner, P. ; Liliental-Weber, Z. ; Swider, W. ; Sohn, H. ; Yau, WaiFan ; Baranowski, J. ; Weber, E. R.
Pub. info.: Materials reliability in microelectronics III : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.487-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 309
4.

Conference Proceedings
Conference Proceedings
4. Chemical and Structural Analysis of Nitridated Sapphire
Cho, Y. ; Rouvimov, S. ; Kim, Y. ; Liliental-Weber, Z. ; Weber, E. R.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.45-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Structural and Photoluminescence Studies of Er-Implanted LT-GaAs:Be
Maltez, R. L. ; Liliental-Weber, Z. ; Washburn, J. ; Behar, M. ; Klein, P. B. ; Specht, P. ; Weber, E. R.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.319-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
6.

Conference Proceedings
Conference Proceedings
6. Properties of Homoepitaxially MBE-Grown GaN
Suski, T. ; Krueger, J. ; Kisielowski, C. ; Phatak, P. ; Leung, M. S. H. ; Liliental-Weber, Z. ; Gassmann, A. ; Newman, N. ; Rubin, M. D. ; Weber, E. R. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Helava, H. I.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.329-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
7.

Conference Proceedings
Conference Proceedings
7. THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS
Liliental-Weber, Z. ; Weber, E. R. ; Washburn, J. ; Liu, T. Y. ; Kroemer, H.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.91-98,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
8.

Conference Proceedings
Conference Proceedings
8. Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source
Leung, M. S. H. ; Klockenbrink, R. ; Kisielowski, C. ; Fujii, H. ; Kruger, J. ; S., Sudhir G. ; Anders, A. ; Liliental-Weber, Z. ; Rubin, M. ; Weber, E. R.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.221-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
9.

Conference Proceedings
Conference Proceedings
9. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer
Ruvimov, S. ; Liliental-Weber, Z. ; Washburn, J. ; Kim, Y. ; Sudhir, G. S. ; Krueger, J. ; Weber, E. R.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.295-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572