Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
- Author(s):
Williams, J. R. Isaacs-Smith, T. Wang, S. Ahyi, C. Lawless, R. M. Tin, C. C. Dhar, S. Franceschetti, A. Pantelides, S. T. Feldman, L.C. Chung, G. Chisholm, M. - Publication title:
- Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 786
- Pub. Year:
- 2004
- Page(from):
- 371
- Page(to):
- 378
- Pages:
- 8
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997240 [1558997245]
- Language:
- English
- Call no.:
- M23500/786
- Type:
- Conference Proceedings
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