1.

Conference Proceedings
Conference Proceedings
1. Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
Schowalter, L. J. ; Shusterman, Y. ; Wang, R. ; Bhat, I. ; Arunmozhi, G. ; Slack, G. A.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.76.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Electrostatic Force Microscopy and Secondary Electron Imaging of Double Stacking Faults in Heavily n-Type 4H-SiC After Oxidation
Mikhov, M.K. ; Skromme, B.J. ; Wang, R. ; Li, C. ; Bhat, I.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.139-144,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 799
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
Skromme, B.J. ; Mikhov, M.K. ; Chen, L. ; Samson, G. ; Wang, R. ; Li, C. ; Bhat, I.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.581-584,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
Wang, R. ; Bhat, I. ; Chow, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.211-214,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Electro-Chemical Mechanical Polishing of Silicon Carbide
Li, C. ; Wang, R. ; Seiler, J. ; Bhat, I.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.801-804,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
Wang, R. ; Bhat, I. ; Chow, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.303-306,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Preparation and characterization of single-crystal aluminum nitride substrates
Schowalter, L. J. ; Rojo, J. C. ; Yakolev, N. ; Shusterman, Y. ; Dovidenko, K. ; Wang, R. ; Bhat, I. ; Slack, G. A.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W6.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
8.

Conference Proceedings
Conference Proceedings
8. Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
Wang, R. ; Bhat, I. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.211-214,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
Wang, R. ; Bhat, I. ; Chow, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.303-306,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393