1.

Conference Proceedings
Conference Proceedings
1. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Sun, G.S. ; Ning, J. ; Gong, Q.C. ; Gao, X. ; Wang, L. ; Liu, X.F. ; Zeng, Y.P. ; Li, J.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.191-194,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
Sun, G.S. ; Luo, M.C. ; Wang, L. ; Zhu, S.R. ; Li, J.M. ; Zeng, Y.P. ; Lin, L.Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.339-342,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
Sun, G.S. ; Luo, M.C. ; Wang, L. ; Zhu, S.R. ; Li, J.M. ; Zeng, Y.P. ; Lin, L.Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.339-342,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393