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*EFFECT OF Si AND Ge INTERFACE LAYERS ON THE SCHOTTKY BARRIER HEIGHT OF METAL CONTACTS TO GaAs

Author(s):
Publication title:
Chemistry and defects in semiconductor heterostructures
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
148
Pub. Year:
1989
Page(from):
125
Page(to):
136
Pages:
12
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990210 [1558990216]
Language:
English
Call no.:
M23500/148
Type:
Conference Proceedings

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