1.

Conference Proceedings
Conference Proceedings
1. Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy
Wagner,J. ; Ramsteiner,M. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C. ; Braun,W. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.259-264,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces
Newman,R.C. ; Ashwin,M.J. ; Fahy,M.R. ; Hart,L. ; Holmes,S.N. ; Roberts,C. ; Wagner,J.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.425-430,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201