1.

Conference Proceedings
Conference Proceedings
1. Properties of N- and P-Channel MOSFETs with Ultrathin RICYD Oxynitride Gate Dielectrics.
Vogel, E.M. ; Wortman, J.J.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.90-106,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
2.

Conference Proceedings
Conference Proceedings
2. Silicon Oxynitride Films formed by Rapid Ther-mal Chemical Vapor Deposition for VLSI Applications
Vogel, E.M. ; Wortman, J.J. ; McLarty, P.K. ; Watt, V.H.C. ; Kirkpatrick, B.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.394-407,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10