1.

Conference Proceedings
Conference Proceedings
1. FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP
Wu, M.F. ; De Wachter, J. ; Hendrickx, P. ; Pattyn, H. ; Van Bavel, A.M. ; Langouche, G. ; Vanhellemont, J. ; Bender, H. ; Maenhoudt, M. ; Bruynseraede, Y.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.899-904,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS
Trauwaert, M.-A. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Johlander, B. ; Harboe-Sorensen, R. ; Adams, L. ; Clauws, P.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.93-98,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
3.

Conference Proceedings
Conference Proceedings
3. HETEROJUNCTION BIPOLAR TRANSISTORS (HBT) WITH a-SI :H OR pc-Si EMITTER
Symons, J. ; Nijs, J. ; Vanhellemont, J. ; Baert, K. ; Michiel, H. ; Willeke, G. ; Vandervorst, W. ; Mertens, R.
Pub. info.: Amorphous silicon semiconductors -- Pure and hydrogenated : symposium held April 21-24, 1987, Anaheim, California, U.S.A..  pp.621-626,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 95
4.

Conference Proceedings
Conference Proceedings
4. InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY
Dobbelaere, W. ; De Boeck, J. ; De Raedt, W. ; Vanhellemont, J. ; Zou, G. ; Van Hove, M. ; Brijs, B. ; Mertens, R. ; Borghs, G.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.181-186,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
5.

Conference Proceedings
Conference Proceedings
5. STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON Si AND Be DOPING OF HETEROEPITAXIAL InAsSb ON GaAs-COATED Si SUBSTRATES FOR INFRARED PHOTODIODES
Boeck, De J. ; Dobbelaere, W. ; Van Hove, M. ; Vanhellemont, J. ; De Raedt, W. ; Vandervorst, W. ; Mertens, R. ; Borghs, G.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.147-152,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
6.

Conference Proceedings
Conference Proceedings
6. OPTIMIZATION OF Si-WAFER CLEANING AND THE USE OF BUFFER-LAYERS FOR EPITAXIAL GROWTH OF SiGe-LAYERS BY VLPCVD AT T = 650 C
Caymax, Matty R. ; Poortmans, J. ; Van Ammel, A. ; Vandervorst, W. ; Vanhellemont, J. ; Nijs, J.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.461-466,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
7.

Conference Proceedings
Conference Proceedings
7. EVALUATION OF Si SURFACE CONDITIONS BY THE USE OF A SURFACE PHOTOVOLTAGE TECHNIQUE
Trauwaert, M.-A. ; Kenis, K. ; Caymax, M. ; Mertens, P.W. ; Heyns, M.M. ; Vanhellemont, J. ; Graf, D. ; Wagner, P.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.455-462,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
8.

Conference Proceedings
Conference Proceedings
8. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS
Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1095-1112,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
9.

Conference Proceedings
Conference Proceedings
9. ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON
Vanhellemont, J. ; Simoen, E. ; Bosman, G. ; Claeys, C. ; Kaniava, A. ; Gaubas, E. ; Blondeel, A. ; Clauws, P.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.670-683,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
10.

Conference Proceedings
Conference Proceedings
10. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL
Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.490-502,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
11.

Conference Proceedings
Conference Proceedings
11. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich
Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.158-169,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
12.

Conference Proceedings
Conference Proceedings
12. Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography
Kissinger, G. ; Vanhellemont, J. ; Graef, D. ; Zulehner, W. ; Claeys, C. ; Richter, H.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.156-164,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30
13.

Conference Proceedings
Conference Proceedings
13. PL study of oxygen related defects in silicon
Libezny, M. ; Kaniava, A. ; Kissinger, G. ; Nijs, J. ; Claeys, C. ; Vanhellemont, J.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.165-172,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30
14.

Conference Proceedings
Conference Proceedings
14. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.74-87,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
15.

Conference Proceedings
Conference Proceedings
15. Determination of Intrinsic Point Defect Properties in Silicon by Analyzing OSF-Ring Dynamics and Void Formation
Dornberger, E. ; Sinno, T. ; Esfandyari, J. ; Vanhellemont, J. ; Brown, R.A. ; von Ammon, W.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.170-187,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
16.

Conference Proceedings
Conference Proceedings
16. Electron microscopy techniques for the assessment of localised stress distributions in semiconductors
Vanhellemont, J. ; Janssens, K.G.F. ; Frabboni, S. ; Balboni, R. ; Armigliato, A.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.173-192,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30
17.

Conference Proceedings
Conference Proceedings
17. D-defects and metal-related flow patterns
Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.32-39,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
18.

Conference Proceedings
Conference Proceedings
18. Simulation of grown-in voids in Czochralski silicon crystals
Dornberger, E. ; Esfandyari, J. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.40-49,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
19.

Conference Proceedings
Conference Proceedings
19. Effect of Substrate Defects on GOI of Ultra-Thin Gate Oxides
Bearda, T.R. ; Vanhellemont, J. ; Mertens, P.W. ; Heyns, M.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.258-263,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
20.

Conference Proceedings
Conference Proceedings
20. Recent Progress in Understanding Oxygen Precipitation in Silicon
Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.101-124,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
21.

Conference Proceedings
Conference Proceedings
21. Computer Simulation of Oxygen Precipitation by Considering a Temperature Dependent Interfacial Energy
Esfandyari, J. ; Vanhellemont, J. ; Obermeier, G.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.437-445,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
22.

Conference Proceedings
Conference Proceedings
22. VLPCVD HETEROEPITAXIAL GROWTH OF VERY THIN Ge-LAYERS ON Si-SUBSTRATES
Caymax,. Matty R. ; Poortmans, J. ; Van Ammel, A. ; Nijs, J. ; Vandervorst, W. ; Vanhellemont, J. ; Brijs, B.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.85-90,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263
23.

Conference Proceedings
Conference Proceedings
23. Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon
Kissinger, G. ; Vanhellemont, J. ; Morgenstern, G. ; Blietz, M. ; Tittelbach-Helmrich, K. ; Obermejer, G. ; Wahlich, R.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.268-279,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
24.

Conference Proceedings
Conference Proceedings
24. A COMPARISON OF DIFFERENT TECHNIQUES FOR THE RAPID THERMAL ANNEALING OF ION IMPLANTS IN SILICON
Wouters, D. J. ; Vanhellemont, J. ; Avau, D. ; Maes, H. E.
Pub. info.: Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.731-736,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 100
25.

Conference Proceedings
Conference Proceedings
25. DEGRADATION AND RECOVERY OF BORON DOPED STRAINED SILICON GERMANIUM LAYERS AFTER 1-MeV ELECTRON IRRADIATION
Ohyama, H. ; Vanhellemont, J. ; Trauwaert, M.-A. ; Poortmans, J. ; Caymax, M. ; Clauws, P.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.433-438,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
26.

Conference Proceedings
Conference Proceedings
26. MULTI-STEP RAPID THERMAL ANNEALING TO IMPROVE THE STRUCTURAL AND ELECTRICAL PROPERTIES OF GaAs ON Si
Zou, G. ; De Boeck, J. ; de Potter, M. ; Deneffe, K. ; de Wolf, I. ; Vanhellemont, J. ; Borghs, G. ; Van Rossum, M.
Pub. info.: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.479-486,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 224
27.

Conference Proceedings
Conference Proceedings
27. Monitoring of Neutron Transmutation Doped Silicon Recombination Properties by Microwave Absorption Transient Techniques
Gaubas, E. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Clauws, P. ; Kraner, H.W. ; Vilkelis, G.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.439-449,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
28.

Conference Proceedings
Conference Proceedings
28. INVITED: PROCESS INDUCED MECHANICAL STRESSES IN SILICON
Vanhellemont, J.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.997-1011,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
29.

Conference Proceedings
Conference Proceedings
29. Accurate Infrared Absorption Measurement of Interstitial and Precipitated Oxygen in Heavily Doped Silicon
De Gryse, O. ; Clauws, P. ; Rossou, L. ; Van Landuyt, J. ; Vanhellemont, J. ; Mondelaers, W.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.398-409,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
30.

Conference Proceedings
Conference Proceedings
30. Proton irradiation induced lattice defects in Si diodes and their effects on device performance
Ohyama, H. ; Simoen, E. ; Claeys, C. ; Vanhellemont, J. ; Takami, Y. ; Hayama, T. ; Sunaga, H. ; Kobayashi, K.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.143-152,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
31.

Conference Proceedings
Conference Proceedings
31. Impact of processing parameters on leakage current and defect behaviour of N+P silicon junction diodes
Gramenova, E. ; Jansen, Ph. ; Simoen, E. ; Vanhellemont, J. ; Dupas, L. ; Deferm, L.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.228-242,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
32.

Conference Proceedings
Conference Proceedings
32. Investigation of Low Resistivity As-Grown CZ Silicon Materials by Visible and Infrared Light Scattering Techniques
Kumpe, R. ; Vanhellemont, J. ; Lang, J. ; Lambert, U.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.379-388,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
33.

Conference Proceedings
Conference Proceedings
33. Low Temperature Anneal of the Divacancy in P-Type Silicon
Trauwaert, M.-A. ; Vanhellemont, J. ; Maes, H. E. ; Bavel, A.-M. Van ; Langouche, G. ; Stesmans, A. ; Clauws, P.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.953-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
34.

Conference Proceedings
Conference Proceedings
34. ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON
Wu, M. F. ; Wachter, J. De ; Bavel, A.-M. Van ; Pattyn, H. ; Langouche, G. ; Vanhellemont, J. ; Bender, H. ; Temst, K. ; Wuyts, B. ; Bruynseraede, Y.
Pub. info.: Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.159-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 320
35.

Conference Proceedings
Conference Proceedings
35. Degradation and Recovery of Si1-xGex Devices by Irradiation
Ohyama, H. ; Vanhellemont, J. ; Takami, Y. ; Hayama, K. ; Kudo, T. ; Hakata, T. ; Kobayashi, K. ; Sunaga, H. ; Hironaka, I. ; Poortmans, J. ; Caymax, M.
Pub. info.: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.365-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 379
36.

Conference Proceedings
Conference Proceedings
36. Hydrogenation of Multicrystalline Si-Materials for Solar Cells: Discrimination Between Effects in the Intra-Grain and Grain Boundary Regions
Poortmans, J. ; Rosmeulen, M. ; Kaniava, A. ; Vanhellemont, J. ; Elgamel, H. ; Nijs, J.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.399-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
37.

Conference Proceedings
Conference Proceedings
37. Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors
Vanhellemont, J. ; Janssens, K. G. F. ; Frabboni, S. ; Smeys, P. ; Balboni, R. ; Armigliato, A.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.479-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
38.

Conference Proceedings
Conference Proceedings
38. ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON
Wu, M. F. ; Wachter, J. De ; Bavel, A.-M. Van ; Pattyn, H. ; Langouche, G. ; Vanhellemont, J. ; Bender, H. ; Temst, K. ; Wuyts, B. ; Bruynseraede, Y.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.711-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
39.

Conference Proceedings
Conference Proceedings
39. ION IMPLANTATION OF HIGH DOSES OF Co IN Si1-xGex ALLOYS
Lauwers, A. ; Maex, K. ; Vandervorst, W. ; Brijs, G. ; Poortmans, J. ; Caymax, M. ; Vanhellemont, J. ; Petersson, S.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.299-304,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
40.

Conference Proceedings
Conference Proceedings
40. The Impact of Processing-Induced Defects on the Electrical Characteristics and the Degradation of Si n+p Junctions
Simoen, E. ; Vanhellemont, J. ; Kaniava, A. ; Claeys, C.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.72-81,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
41.

Conference Proceedings
Conference Proceedings
41. Chemical and Structural Characterization of Oxide Precipitates in Heavily Boron Doped Silicon by Infrared Spectroscopy and Transmission Electron Microscopy
Gryse, O. De ; Clauws, P. ; Vanhellemont, J. ; Lebedev, O. ; Van Landuyt, J. ; Simoen, E. ; Claeys, C.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.183-196,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20
42.

Conference Proceedings
Conference Proceedings
42. On the Nucleation and Growth of Bulk Stacking Faults in Cz Silicon
Vanhellemont, J. ; De Gryse, O. ; Clauws, P.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.91-104,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20
43.

Conference Proceedings
Conference Proceedings
43. Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors
Vanhellemont, J. ; Janssens, K. G. F. ; Frabboni, S. ; Smeys, P. ; Balboni, R. ; Armigliato, A.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.435-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
44.

Conference Proceedings
Conference Proceedings
44. On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
Vanhellemont, J. ; Kaniava, A. ; Libezny, M. ; Simoen, E. ; Kissinger, G. ; Gaubas, E. ; Claeys, C. ; Clauws, P.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.35-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
45.

Conference Proceedings
Conference Proceedings
45. IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quality
Kaniava, A. ; Menczigar, U. ; Vanhellemont, J. ; Poortmans, J. ; Rotondaro, A. L. P. ; Gaubas, E. ; Vaitkus, J. ; Koster, L. ; Graf, D.
Pub. info.: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.389-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 386
46.

Conference Proceedings
Conference Proceedings
46. Observation of Vacancy Clustering in Si Crystals during In Situ Electron Irradiation in a High Voltage Electron Microscope
Fedina, L. ; Landuyt, J. Van ; Vanhellemont, J. ; Aseev, A.
Pub. info.: In situ electron and tunneling microscopy of dynamic processes : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.189-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 404
47.

Conference Proceedings
Conference Proceedings
47. On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments
Vanhellemont, J. ; Kissinger, G. ; Senkader, S. ; Graef, D. ; Kenis, K. ; Depas, M. ; Lambert, U. ; Wagner, P.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.226-237,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
48.

Conference Proceedings
Conference Proceedings
48. Lattice Defects in High Resistivity Silicon
Claeys, C. ; Simoen, E. ; Vanhellemont, J.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.305-324,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
49.

Conference Proceedings
Conference Proceedings
49. A Fast and Precise Specimen Preparation Technique for TEM Investigation of Prespecified Areas of Semiconductor Devices
Romano, A. ; Vanhellemont, J. ; Bender, H.
Pub. info.: Specimen preparation for transmission electron microscopy of materials--II : symposium held April 19-20, 1990, San Francisco, California, U.S.A..  pp.167-176,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 199