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10 results

Conference Proceedings

1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS

Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1095-1112, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

2. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich

Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.158-169, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

3. Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography

Kissinger, G. ; Vanhellemont, J. ; Graef, D. ; Zulehner, W. ; Claeys, C. ; Richter, H.

Pub. info.:	ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands. pp.156-164, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-30

Conference Proceedings

4. PL study of oxygen related defects in silicon

Libezny, M. ; Kaniava, A. ; Kissinger, G. ; Nijs, J. ; Claeys, C. ; Vanhellemont, J.

Pub. info.:	ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands. pp.165-172, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-30

Conference Proceedings

5. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.74-87, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

6. D-defects and metal-related flow patterns

Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.32-39, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

7. Recent Progress in Understanding Oxygen Precipitation in Silicon

Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.101-124, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

8. Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon

Kissinger, G. ; Vanhellemont, J. ; Morgenstern, G. ; Blietz, M. ; Tittelbach-Helmrich, K. ; Obermejer, G. ; Wahlich, R.

Pub. info.:	Proceedings of the Third International Symposium on Defects in Silicon. pp.268-279, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-1

Conference Proceedings

9. On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

Vanhellemont, J. ; Kaniava, A. ; Libezny, M. ; Simoen, E. ; Kissinger, G. ; Gaubas, E. ; Claeys, C. ; Clauws, P.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.35-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

10.

Conference Proceedings

10. On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments

Vanhellemont, J. ; Kissinger, G. ; Senkader, S. ; Graef, D. ; Kenis, K. ; Depas, M. ; Lambert, U. ; Wagner, P.

Pub. info.:	Proceedings of the Fourth International Symposium on High Purity Silicon. pp.226-237, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-13

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