1.

Conference Proceedings
Conference Proceedings
1. SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS
Trauwaert, M.-A. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Johlander, B. ; Harboe-Sorensen, R. ; Adams, L. ; Clauws, P.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.93-98,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON
Vanhellemont, J. ; Simoen, E. ; Bosman, G. ; Claeys, C. ; Kaniava, A. ; Gaubas, E. ; Blondeel, A. ; Clauws, P.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.670-683,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
3.

Conference Proceedings
Conference Proceedings
3. DEGRADATION AND RECOVERY OF BORON DOPED STRAINED SILICON GERMANIUM LAYERS AFTER 1-MeV ELECTRON IRRADIATION
Ohyama, H. ; Vanhellemont, J. ; Trauwaert, M.-A. ; Poortmans, J. ; Caymax, M. ; Clauws, P.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.433-438,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
4.

Conference Proceedings
Conference Proceedings
4. Monitoring of Neutron Transmutation Doped Silicon Recombination Properties by Microwave Absorption Transient Techniques
Gaubas, E. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Clauws, P. ; Kraner, H.W. ; Vilkelis, G.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.439-449,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
5.

Conference Proceedings
Conference Proceedings
5. Accurate Infrared Absorption Measurement of Interstitial and Precipitated Oxygen in Heavily Doped Silicon
De Gryse, O. ; Clauws, P. ; Rossou, L. ; Van Landuyt, J. ; Vanhellemont, J. ; Mondelaers, W.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.398-409,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
6.

Conference Proceedings
Conference Proceedings
6. Low Temperature Anneal of the Divacancy in P-Type Silicon
Trauwaert, M.-A. ; Vanhellemont, J. ; Maes, H. E. ; Bavel, A.-M. Van ; Langouche, G. ; Stesmans, A. ; Clauws, P.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.953-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
7.

Conference Proceedings
Conference Proceedings
7. Chemical and Structural Characterization of Oxide Precipitates in Heavily Boron Doped Silicon by Infrared Spectroscopy and Transmission Electron Microscopy
Gryse, O. De ; Clauws, P. ; Vanhellemont, J. ; Lebedev, O. ; Van Landuyt, J. ; Simoen, E. ; Claeys, C.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.183-196,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20
8.

Conference Proceedings
Conference Proceedings
8. On the Nucleation and Growth of Bulk Stacking Faults in Cz Silicon
Vanhellemont, J. ; De Gryse, O. ; Clauws, P.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.91-104,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20
9.

Conference Proceedings
Conference Proceedings
9. On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
Vanhellemont, J. ; Kaniava, A. ; Libezny, M. ; Simoen, E. ; Kissinger, G. ; Gaubas, E. ; Claeys, C. ; Clauws, P.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.35-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378