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Conference Proceedings
Conference Proceedings
1. UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ON Si BY MOCVD
Nozaki, Shinji ; Wu, A. T. ; Murray, J. J. ; George, T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.213-218,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
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Conference Proceedings
Conference Proceedings
2. THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS
George, T. ; Weber, E. R. ; Nozaki, S. ; Wu, A. T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.207-212,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
3.

Conference Proceedings
Conference Proceedings
3. AlGaAs/GaAs DOUBLE-HETEROSTRUCTURE OPTICAL WAVEGUIDE ON Si SUBSTRATES
Yuasa, T. ; Umeno, M. ; Sakai, S. ; Wada, N. ; Ueta, Y.
Pub. info.: Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A..  pp.225-230,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 228
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Conference Proceedings
Conference Proceedings
4. ROOM-TEMPERATURE CW OPERATION OF SQW LASERS ON Si GROWN WITH AlGaAs/AlGaP INTERMEDIATE LAYERS BY MOCVD
Egawa, T. ; Hayashi, H. ; George, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A..  pp.189-194,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 228
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Conference Proceedings
Conference Proceedings
5. INITIAL STAGE OF HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR ON Si SUBSTRATE
Soga, T. ; George, T. ; Suzuki, T. ; Jimbo. T. ; Umeno, M.
Pub. info.: Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A..  pp.155-160,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 221
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Conference Proceedings
Conference Proceedings
6. Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers
Shimura, T. ; Hosoi, T. ; Umeno, M.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.241-250,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2
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Conference Proceedings
Conference Proceedings
7. CORRELATIONS BETWEEN CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD
Egawa, T. ; Nozaki, S. ; Noto, N. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.273-278,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
8.

Conference Proceedings
Conference Proceedings
8. GaAs/AlGaAs SQW OPTICAL SWITCH ON Si
Yuasa, T. ; Nagashima, Y. ; Egawa, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.363-368,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
9.

Conference Proceedings
Conference Proceedings
9. HIGH QUALITY GaP GROWTH ON Si SUBSTRATES BY MOCVD
Uchida, K. ; Kohama, Y. ; Tajima, M. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.319-324,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
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Conference Proceedings
Conference Proceedings
10. Towards High Efficiency Solar to Electrical Energy Conversion Efficiencies: Multiple Bandgap Photoelectrochemical Solar Cells
Licht, S. ; Ramakrishnan, P.A. ; Khaselev, O. ; Soga, T. ; Umeno, M.
Pub. info.: Proceedings of the Symposium on Photoelectrochemistry.  pp.358-367,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-20
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Conference Proceedings
Conference Proceedings
11. Passivation of Defects in GaAs Grown on Low-Cost Substrate for Device Application
Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001).  VOL-2  pp.996-1001,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4746
12.

Conference Proceedings
Conference Proceedings
12. EVALUATION OF ANTI-PHASE BOUNDARIES IN GaAs/Si HEREROSTRUCTURES BY TRANSMISSION ELECTRON MICROSCOPY
Ueda, O. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.267-272,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
13.

Conference Proceedings
Conference Proceedings
13. EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si
Nozaki, S. ; Noto, N. ; Okada, M. ; Egawa, T. ; Soga,. T ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.235-240,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
14.

Conference Proceedings
Conference Proceedings
14. NUCLEATION STUDIES OF LATTICE MATCHED AND MI-MATCHED HETEROEPITAXIAL LAYERS USING THE GaAs/A1Ga1-XP/Si SYSTEM
George, Thomas ; Weber, Eike R. ; Wu, A. T. ; Nozaki, S. ; Noto, N. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.253-260,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
15.

Conference Proceedings
Conference Proceedings
15. GROWTH OF GaAs ON Si USING A1GaP INTERMEDIATE LAYER
Noto, N. ; Nozaki, S. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.247-252,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
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Conference Proceedings
Conference Proceedings
16. High-Temperature Annealing Behaviors of Luminescent SiOx:H Films
Ma, Z. ; Xiang, X. ; Sheng, S. ; Liao, X. ; Shao, C. ; Umeno, M.
Pub. info.: Luminescent materials : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.101-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 560
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Conference Proceedings
Conference Proceedings
17. Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD
Egawa, T. ; Ishikawa, H. ; Yamamoto, K. ; Jimbo, T. ; Umeno, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1101-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
18.

Conference Proceedings
Conference Proceedings
18. HETEROEPITAXY OF GaAs ON Si BY MOCVD
Soga, T. ; Imori, T. ; Umeno, M.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.69-72,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
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Conference Proceedings
Conference Proceedings
19. Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
Egawa, T. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1191-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
20.

Conference Proceedings
Conference Proceedings
20. X-Ray Diffraction Evidence for Crystalline SiO2 in Thermal Oxide Layers on Si Substrates
Shimura, T. ; Takahash, I. ; Harada, J. ; Umeno, M.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.456-467,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
21.

Conference Proceedings
Conference Proceedings
21. Optoelectronic Devices on GaAs/Si Grown by MOCVD Technique
Egawa, T. ; Hasegawa, Y. ; Jimbo, T. ; Umeno, M.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.154-174,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6