1.

Conference Proceedings
Conference Proceedings
1. UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ON Si BY MOCVD
Nozaki, Shinji ; Wu, A. T. ; Murray, J. J. ; George, T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.213-218,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS
George, T. ; Weber, E. R. ; Nozaki, S. ; Wu, A. T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.207-212,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
3.

Conference Proceedings
Conference Proceedings
3. ROOM-TEMPERATURE CW OPERATION OF SQW LASERS ON Si GROWN WITH AlGaAs/AlGaP INTERMEDIATE LAYERS BY MOCVD
Egawa, T. ; Hayashi, H. ; George, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A..  pp.189-194,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 228
4.

Conference Proceedings
Conference Proceedings
4. INITIAL STAGE OF HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR ON Si SUBSTRATE
Soga, T. ; George, T. ; Suzuki, T. ; Jimbo. T. ; Umeno, M.
Pub. info.: Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A..  pp.155-160,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 221