1.

Conference Proceedings
Conference Proceedings
1. Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
Feng, Z.C. ; Huang, C.W. ; Chang, W.Y. ; Zhao, J. ; Tin, C.C. ; Lu, W. ; Collins, W.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.695-698,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO2/High-K Dielectric Stack
Kumta, A. ; Rusli, E. ; Tin, C.C.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1171-1174,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC
McDonald, K. ; Weller, R.A. ; Pantelides, S.T. ; Feldman, L.C. ; Chung, G.Y ; Tin, C.C. ; Williams, J.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.341-347,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
4.

Conference Proceedings
Conference Proceedings
4. DEFECT LEVELS IN THE NEAR-SURFACE REGION OF 2.0 MeV 16O+ ION IMPLANTED n-GaAs
Tin, C.C. ; Barnes, P.A. ; Bardin, T.T. ; Pronko, J.G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.979-982,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
5.

Conference Proceedings
Conference Proceedings
5. Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Feldman, L.C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.967-972,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Feldman, L.C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.967-972,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System
Pantelides, S.T. ; Buczko, R. ; Ventra, M. Di ; Wang, S. ; Kim, S.-G. ; Pennycook, S.J. ; Duscher, G. ; Feldman, L.C. ; McDonald, K. ; Chanana, R.K. ; Weller, R.A. ; Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; Isaacs-Smith, T.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
8.

Conference Proceedings
Conference Proceedings
8. Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide
Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Lipkin, L.A. ; Feldman, L.C.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
9.

Conference Proceedings
Conference Proceedings
9. Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion
Gao, Ying ; Soloviev, S.I. ; Wang, X. ; Tin, C.C. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
10.

Conference Proceedings
Conference Proceedings
10. A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
Merrett, J. N. ; Sheridan, D.C. ; Williams, J.R. ; Tin, C.C. ; Cressler, John.D.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.623-626,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356