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Conference Proceedings

1. Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Tanaka, Y. ; Kobayashi, N. ; Hasegawa, M. ; Ogura, M. ; Ishida, Y. ; Yoshida, S. ; Okumura, H. ; Tanoue, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.917-920, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

2. Structural and electrical properties of beryllium implanted silicon carbide

Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Tanoue, H. ; Gong, M. ; Chen, X. D. ; Fung, S. ; Beling, C. D.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.117-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. ; Tanoue, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.799-802, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature

Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, N. ; Tanoue, H. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.865-868, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Hot-Implantation of Phosphorus Ions into 4H-SiC

Imai, S. ; Kobayashi, S. ; Shinohe, T. ; Fukuda, K. ; Tanaka, Y. ; Senzaki, J. ; Tanoue, H. ; Kobayashi, N. ; Okushi, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.861-864, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide

Senzaki, J. ; Fukuda, K. ; Ishida, Y. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, N. ; Tanaka, T. ; Arai, K.

Pub. info.:	Wide-bandgap electronic devices. pp.T6.7-, 2001. Warrendale, PA.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	622

Conference Proceedings

7. Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

Henkel, T. ; Ferro, G. ; Nishizawa, S. ; Pressler, H. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, N.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.481-484, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Electrical and Structural Properties of Al and B Implanted 4H-SiC

Tanaka, Y. ; Kobayashi, N. ; Okumura, H. ; Suzuki, R. ; Ohdaira, T. ; Hasegawa, M. ; Ogura, M. ; Yoshida, S. ; Tanoue, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.909-912, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. ; Tanoue, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.605-608, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

10.

Conference Proceedings

10. Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. ; Tanoue, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.799-802, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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