1.

Conference Proceedings
Conference Proceedings
1. Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2
Tanaka, Y. ; Yano, K. ; Okamoto, M. ; Takatsuka, A. ; Fukuda, K. ; Kasuga, M. ; Arai, K. ; Yatsuo, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1219-1222,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation
Tanaka, Y. ; Kojima, K. ; Takao, K. ; Okamoto, M. ; Kawasaki, M. ; Takatsuka, A. ; Yatsuo, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.985-988,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
Tanaka, Y. ; Tanoue, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.799-802,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature
Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, N. ; Tanoue, H. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.865-868,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide
Senzaki, J. ; Fukuda, K. ; Ishida, Y. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, N. ; Tanaka, T. ; Arai, K.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.7-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
6.

Conference Proceedings
Conference Proceedings
6. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
Ohshima, T. ; Lee, K.K. ; Ishida, Y. ; Kojima, K. ; Tanaka, Y. ; Takahashi, T. ; Yoshikawa, M. ; Okumura, H. ; Arai, K. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1405-1408,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition
Okamoto, M. ; Kosugi, R. ; Tanaka, Y. ; Takeuchi, D. ; Nakashima, S. ; Nishizawa, S. ; Fukuda, K. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.299-302,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
Tanaka, Y. ; Kojima, K. ; Suzuki, T. ; Hayashi, T. ; Fukuda, K. ; Yatsuo, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1065-1068,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
Tanaka, Y. ; Ohno, T. ; Oyanagi, N. ; Nishizawa, S. ; Suzuki, T. ; Fukuda, K. ; Yatsuo, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1009-1012,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
Tanaka, Y. ; Tanoue, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.605-608,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436