1.

Conference Proceedings
Conference Proceedings
1. Photocatalytic Oxidation of Ethanol over Tantalum Oxide Supported on Silica
Tanaka, T. ; Takenaka, S. ; Funabiki, T. ; Yoshida, S.
Pub. info.: Acid-base catalysis II : proceedings of the International Symposium on Acid-Base Catalysis II, Sapporo, December 2-4, 1993.  pp.485-,  1994.  Tokyo.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 90
2.

Conference Proceedings
Conference Proceedings
2. Base Sites of Magnesium Oxide Dispersed on Silica as Active Sites for CO Photooxidation
Yoshida, H. ; Tanaka, T. ; Nakatsuka, K. ; Funabiki, T. ; Yoshida, S.
Pub. info.: Acid-base catalysis II : proceedings of the International Symposium on Acid-Base Catalysis II, Sapporo, December 2-4, 1993.  pp.473-,  1994.  Tokyo.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 90
3.

Conference Proceedings
Conference Proceedings
3. Highly Dispersed Tianium Oxide on Silica: Preparation, Characterization by XAFS, and Photocatalysis
Yoshida, S. ; Takenaka, S. ; Tanaka, T. ; Hirano, H. ; Hayashi, H.
Pub. info.: 11th International Congress on Catalysis, 40th anniversary : Proceedings of the 11th ICC, Baltimore, MD, USA, June 30-July 5, 1996.  Part A  pp.871-,  1996.  New York.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 101
4.

Conference Proceedings
Conference Proceedings
4. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Nagai, K. ; Sekigawa, T. ; Okushi, H. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1283-1286,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Effect of Post-Oxidation-Annealing in Hydrogen on SiO2/4H-SiC Interface
Suzuki, S. ; Fukuda, K. ; Okushi, H. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1073-1076,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.169-172,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
8.

Conference Proceedings
Conference Proceedings
8. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1037-1040,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
9.

Conference Proceedings
Conference Proceedings
9. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393