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23 results

Conference Proceedings

1. CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut Substrates

Zhang, Z. ; Gao, Y. ; Arjunan, A. C. ; Toupitsyn, E. Y. ; Sadagopan, P. ; Kennedy, R. ; Sudarshan, T. S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.113-116, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

2. Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

Maximenko, S. ; Soloviev, S. ; Grekov, A. ; Bolotnikov, A. ; Gao, Y. ; Sudarshan, T. S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.989-992, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. SiC Epitaxial Growth on Carbon

Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.129-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

4. Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Madangarli, V. P. ; Sudarshan, T. S. ; Tin, C. C.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.345-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

5. Correlation Between Oxide Breakdown and Defects in SiC Wafers

Soloviev, S. ; Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.351-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

6. A Technique for Rapid Thick Film SiC Epitaxial Growth

Khlebnikov, I. ; Sudarshan, T. S. ; Madangarli, V. ; Capano, M. A.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.123-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

7. Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs

Gradinaru, G. ; Kao, N. C. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.77-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

8. Bulk Breakdown in AlGaN/GaN HFETs

Gradinaru, G. ; Kao, N. C. ; Gaska, R. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.309-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

9. High Electric Field Breakdown of 4H-SiC p-n Junction Diodes

Tin, C. C. ; Madangarli, V. ; Hu, R. ; Luckowski, E. ; Casady, J. ; Isaacs-Smith, T. ; Gradinaru, G. ; Sudarshan, T. S. ; Johnson, R. W.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.111-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

10.

Conference Proceedings

10. Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

Sudarshan, T. S. ; Madangarli, V. P. ; Gradinaru, G. ; Tin, C. C. ; Hu, R. ; Isaacs-Smith, T.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.99-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

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