1.

Conference Proceedings
Conference Proceedings
1. Effect of hydrogen on Ca and Mg acceptors in GaN
Lee, J.W. ; Pearton, S.J. ; Zolper, J.C. ; Stall, R.A.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.100-109,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
2.

Conference Proceedings
Conference Proceedings
2. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
3.

Conference Proceedings
Conference Proceedings
3. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
4.

Conference Proceedings
Conference Proceedings
4. Status of Ion Implantation Doping and Isolation of III-V Nitrides
Zolper, J.C. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.144-151,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21