1.

Conference Proceedings
Conference Proceedings
1. Growth of GaN Based Devices by Production Scale MOCVD
Schurman, M.J. ; Tran, C.A. ; Karlicek, R.F., Jr. ; Li, Y. ; Eliashevich, I. ; Brown, M.G. ; Ferguson, I. ; Koszi, L. ; Stall, R.A. ; Liang, S. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.78-86,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
2.

Conference Proceedings
Conference Proceedings
2. A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Cole, M.W. ; Eckart, D.W. ; Han, W.Y ; Pfeffer, R.L. ; Monahan, T. ; Ren, F. ; Yuan, C. ; Stall, R.A. ; Pearton, S.J. ; Li, Y. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.187-197,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
3.

Conference Proceedings
Conference Proceedings
3. High Quality P-type GaN and InGaN Epitaxial Growth on C-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor
Yuan, C. ; Salagaj, T. ; Gurary, A. ; Thompson, A.G. ; Kroll, W. ; Stall, R.A. ; Schurman, M. ; Hwang, C.-Y ; Li, Y. ; Mayo, W.E. ; Lu, Y. ; Krishnankutty, S. ; Kolbas, R.M. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.10-25,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21