Increased Refractive Indices in Rare Earth Doped InP and In0.53Ga0.47As Thin Films
- Author(s):
- Publication title:
- Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 422
- Pub. Year:
- 1996
- Page(from):
- 357
- Pub. info.:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993259 [1558993258]
- Language:
- English
- Call no.:
- M23500/422
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Characterization of Magneto-Optical Rare Earth-Doped InGaAsP Thin Films on InP
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy
Narosa Publishing House |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
10
Conference Proceedings
Domain Structure and Transient Photoconductivity in Ordered Ga0.47In0.53As Epitaxial Films
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
Demonstration of a Y-Branch Switch in Deeply Reactive Ion Etched In0.53Ga0.47As/InP with In-Plane Gates
Electrochemical Society |
Materials Research Society |
12
Conference Proceedings
Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates
SPIE - The International Society of Optical Engineering |