1.

Conference Proceedings
Conference Proceedings
1. The Carbon Vacancy Pair in 4H and 6H SiC
Son, N. T. ; Hai, P. N. ; Shuja, A. ; Chen, W. M. ; Lindstrom, J. L. ; Monemar, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.821-824,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Son, N. T. ; Hai, P. N. ; Chen, W. M. ; Hallin, C. ; Monemar, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.5663-566,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Meyer, B. K. ; Hofmann, D. M. ; Volm, D. ; Chen, W. M. ; Son, N. T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.559-562,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)