1.

Conference Proceedings
Conference Proceedings
1. Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Du, H. ; Skowronski, M. ; Neudeck, P.G. ; Trunek, A.J. ; Spry, D.J. ; Powell, J.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.279-282,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
Garces, N.Y. ; Carlos, W.E. ; Glaser, E.R. ; Huh, S.W. ; Chung, H.J. ; Nigam, S. ; Polyakov, A.Y. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.547-550,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
Huh, S.W. ; Polyakov, A.Y. ; Chung, H.J. ; Nigam, S. ; Skowronski, M. ; Glaser, E.R. ; Carlos, W.E. ; Fanton, M.A. ; Smirnov, N.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.497-500,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
Huh, S.W. ; Sumakeris, J.J. ; Polyakov, A.Y. ; Skowronski, M. ; Klein, P.B. ; Shanabrook, B.V. ; O'Loughlin, M.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.493-496,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Structure of Carrot Derects in 4H-SiC Epilayers
Zhang, X. ; Ha, S. ; Benamara, M. ; Skowronski, M. ; Sumakeris, J.J. ; Ryu, S. ; Paisley, M.J. ; O'Loughlin, M.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.327-332,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Structure of "Star" Defect in 4H-SiC Substrates and Epilayers
Lee, J.W. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.403-406,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
Glaser, E.R. ; Shanabrook, B.V. ; Carlos, W.E. ; Chung, H.J. ; Nigam, S. ; Polyakov, A.Y. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.613-616,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
Glembocki, O.J. ; Skowronski, M. ; Prokes, S.M. ; Gaskill, D.K. ; Caldwell, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.347-350,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
Chung, H.J. ; Huh, S.W. ; Polyakov, A.Y. ; Nigam, S. ; Li, Q. ; Grim, J. ; Skowronski, M. ; Glaser, E.R. ; Carlos, W.E. ; Freitas, J.A. ; Fanton, M.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.625-628,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
Li, Q. ; Polyakov, A.Y. ; Skowronski, M. ; Sanchez, E.K. ; Loboda, M.J. ; Fanton, M.A. ; Bogart, T. ; Gamble, D. ; Smirnov, N.B. ; Makarov, Yu.N.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.51-54,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
11.

Conference Proceedings
Conference Proceedings
11. Halide-CVD Growth of Bulk SiC Crystals
Polyakov, A.Y. ; Fanton, M.A. ; Skowronski, M. ; Chung, H.J. ; Nigam, S. ; Huh, S.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.21-26,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
12.

Conference Proceedings
Conference Proceedings
12. Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC
Nigam, S. ; Chung, H.J. ; Huh, S.W. ; Grim, J. ; Polyakov, A.Y. ; Fanton, M.A. ; Weiland, B. ; Snyder, D.W. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.27-30,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
13.

Conference Proceedings
Conference Proceedings
13. Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide
Everson, W.J. ; Heydemann, V.D. ; Gamble, R.D. ; Snyder, D.W. ; Goda, G. ; Skowronski, M. ; Grim, J. ; Berkman, E. ; Redwing, J.M. ; Acord, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1091-1094,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
14.

Conference Proceedings
Conference Proceedings
14. Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide
Grim, J.R. ; Skowronski, M. ; Everson, W.J. ; Heydemann, V.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1095-1098,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
15.

Conference Proceedings
Conference Proceedings
15. Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
Fanton, M.A. ; Li, Q. ; Polyakov, A.Y. ; Cavalero, R.L. ; Ray, R.G. ; Weiland, B.E. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.103-106,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
16.

Conference Proceedings
Conference Proceedings
16. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
17.

Conference Proceedings
Conference Proceedings
17. ON THE ORIGIN OF EL2 INTRACENTER ABSORPTION BAND IN GaAs
Skowronski, M.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.405-410,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
18.

Conference Proceedings
Conference Proceedings
18. ALKOXIDE DOPING OF GaAs DURING ORGANOMETALLIC VAPOR PHASE EPITAXY
Park, Y. ; Skowronski, M. ; Rosseel, T.M.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.75-80,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
19.

Conference Proceedings
Conference Proceedings
19. HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2
Skowronski, M. ; Lin, D. G. ; Lagowski, J. ; Pawlowicz, L..M. ; Ko, K. Y. ; Gatos, H. C.
Pub. info.: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.207-212,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 46
20.

Conference Proceedings
Conference Proceedings
20. A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
Ha, S. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.443-446,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs
Park, Y. ; Skowronski, M.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.159-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
22.

Conference Proceedings
Conference Proceedings
22. High-Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE
Goorsky, M. S. ; Polyakov, A. Y. ; Skowronski, M. ; Shin, M. ; Greve, D. W.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.489-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
23.

Conference Proceedings
Conference Proceedings
23. OXYGEN DOPING OF GaAs DURING OMVPE CONTROLLED INTRODUCTION OF IMPURITY COMPLEXES
Park, Y. ; Skowronski, M. ; Rosseel, T. S. ; Manasreh, M. O.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.293-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
24.

Conference Proceedings
Conference Proceedings
24. INFLUENCE OF GROWTH TEMPERATURE ON ORDERING IN InGaAs GROWN ON (001) InP USING TERTIARYBUTYLARSINE SOURCE MOCVD
McFadden, R. S. ; Skowronski, M. ; Mahajan, S.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.287-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326
25.

Conference Proceedings
Conference Proceedings
25. Dynamics of Surface Segregation During InGaAs MBE
Evans, Keith R. ; Kaspi, R. ; Ehret, J. E. ; Skowronski, M.
Pub. info.: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.505-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 379
26.

Conference Proceedings
Conference Proceedings
26. Growth of AlBN Solid Solution by OMVPE
Shin, M. ; Polyakov, A. Y. ; Qian, W. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.141-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
27.

Conference Proceedings
Conference Proceedings
27. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE
Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Shin, M. ; Skowronski, M. ; Greve, D. W.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.591-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
28.

Conference Proceedings
Conference Proceedings
28. Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC
Smith, A. R. ; Ramachandran, V. ; Feenstra, R. M. ; Greve, D. W. ; Neugebauer, J. ; Northrup, J. E. ; Shin, M. ; Skowronski, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.363-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
29.

Conference Proceedings
Conference Proceedings
29. The Structural Evolution of Lely Seeds During the Initial Stages of SiC Sublimation Growth
Heydemann, V. D. ; Sanchez, E. K. ; Rohrer, G. S. ; Skowronski, M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.295-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
30.

Conference Proceedings
Conference Proceedings
30. ICP Dry Etching of III-V Nitrides
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Constantine, C. ; Barratt, C. ; Katz, A. ; Poyakov, A. Y. ; Shin, M. ; Skowronski, M.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.393-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
31.

Conference Proceedings
Conference Proceedings
31. HRTEM Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport
Sanchez, E. K. ; Graef, M. de ; Qian, W. ; Skowronski, M.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.655-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
32.

Conference Proceedings
Conference Proceedings
32. Factors Influencing the Electrical and Optical Properties of AlGaN Layers on Sapphire
Shin, M. ; Polyakov, A. Y. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G. ; Freitas, J. A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.643-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
33.

Conference Proceedings
Conference Proceedings
33. The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire
Polyakov, A. Y. ; Shin, M. ; Pearton, S. J. ; Skowronski, M. ; Greve, D. W. ; Freitas, J. A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.607-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
34.

Conference Proceedings
Conference Proceedings
34. Growth-Induced Structural Defects in SiC PVT Boules
Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.385-390,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
Liu, J.Q. ; Sanchez, E.K. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.415-418,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
36.

Conference Proceedings
Conference Proceedings
36. Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
Liu, J.Q. ; Sanchez, E.K. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.435-438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. BAND EDGE OPTICAL ABSORPTION OF MOLECULAR BEAM EPITAXIAL GaSb GROWN ON SEMI-INSULATING GaAs SUBSTRATE
Shah, M. ; Manasreh, M. O. ; Kaspi, R. ; Yen, M. Y. ; Philips, B. A. ; Skowronski, M. ; Shinar, J.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.449-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
38.

Conference Proceedings
Conference Proceedings
38. Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J.Q. ; Skowronski, M. ; Hallin, C. ; Soderholm, R. ; Lendenmann, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1281-1284,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
Ha, S. ; Rohrer, G. S. ; Skowronski, M. ; Heydemann, V. D. ; Snyder, D. W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.67-70,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
40.

Conference Proceedings
Conference Proceedings
40. Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
Sanchez, E. K. ; Heydemann, V. D. ; Snyder, D. W. ; Rohrer, G. S. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.63-66,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
41.

Conference Proceedings
Conference Proceedings
41. Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
Sanchez, E. K. ; Heydemann, V. D. ; Snyder, D. W. ; Rohrer, G. S. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.55-58,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
42.

Conference Proceedings
Conference Proceedings
42. The Effect of Surface Finish on the Dislocation Density in Sublimation Grown SiC Layers
Sanchez, E. K. ; Liu, J. ; Skowronski, M. ; Vetter, W. M. ; Dudley, M. ; Bertke, R. ; Mitchel, W.C.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
43.

Conference Proceedings
Conference Proceedings
43. Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
Ha, S. ; Nuhfer, N. T. ; Graef, M. De ; Rohrer, G. S. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.477-480,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
44.

Conference Proceedings
Conference Proceedings
44. X-Ray Characterization of 3 Inch Diameter 4H and 6H-SiC Experimental Wafers
Kuhr, T. A. ; Vetter, W. M. ; Dudley, M. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.473-476,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
45.

Conference Proceedings
Conference Proceedings
45. Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
Sumakeris, J. J. ; Das, M. K. ; Ha, S. ; Hurt, E. ; Irvine, K. ; Paisley, M. J. ; O'Loughlin, M. J. ; Palmour, J. W. ; Skowronski, M. ; Hobgood, H. M. ; Carter, C. H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.155-158,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
46.

Conference Proceedings
Conference Proceedings
46. A Microscopic Evaluation of the Surface Structure of OMVPE Deposited α-GaN Epilayers
Rohrer, G. S. ; Payne, J. ; Qian, W. ; Skowronski, M. ; Doverspike, K. ; Rowland, L. B. ; Gaskill, D. K.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.381-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
47.

Conference Proceedings
Conference Proceedings
47. Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Ha, S. ; Mieszkowski, P. ; Rowland, L.B. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.231-234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. Electrical Characterization of Semi-Insulating 6H-SiC Substrates
Sanchez, E. ; Wan, J. ; Wang, S. ; Loboda, M. ; Li, C. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.669-672,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
49.

Conference Proceedings
Conference Proceedings
49. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Sumakeris, J.J. ; Das, M. ; Hobgood, H.McD. ; Mueller, S.G. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H., Jr.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1113-1116,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
50.

Conference Proceedings
Conference Proceedings
50. Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
Heydemann, V.D. ; Everson, W.J. ; Gamble, R.D. ; Snyder, D.W. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.805-808,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
51.

Conference Proceedings
Conference Proceedings
51. Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
Chung, H.J. ; Liu, J.-Q. ; Henry, A. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.253-256,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
52.

Conference Proceedings
Conference Proceedings
52. Electrical and Optical Investigation of the Position of Vanadium Related Defects in the 4H and 6H SiC Bandgaps
Jenny, J. R. ; Skowronski, M. ; Mitchel, W. C. ; Smith, S. R. ; Evwaraye, A. O. ; Hobgood, H. M. ; Augustine, G. ; Hopkins, R. H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.507-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
53.

Conference Proceedings
Conference Proceedings
53. Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J.Q. ; Skowronski, M. ; Hallin, C. ; Soederholm, R. ; Lendenmann, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1281-1284,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
54.

Conference Proceedings
Conference Proceedings
54. Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Ha, S. ; Mieszkowski, P. ; Rowland, L.B. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.231-234,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
55.

Conference Proceedings
Conference Proceedings
55. Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
Liu, J.Q. ; Sanchez, E.K. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.435-438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
56.

Conference Proceedings
Conference Proceedings
56. Growth-Induced Structural Defects in SiC PVT Boules
Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.385-390,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
57.

Conference Proceedings
Conference Proceedings
57. Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC
Liu, J.Q. ; Sanchez, E.K. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.415-418,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
58.

Conference Proceedings
Conference Proceedings
58. A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
Ha, S. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.443-446,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
59.

Conference Proceedings
Conference Proceedings
59. Growth of Bulk SiC by Halide Chemical Vapor Deposition
Fanton, M. ; Skowronski, M. ; Snyder, D. ; Chung, H.J. ; Nigam, S. ; Weiland, B. ; Huh, S.W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.87-90,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
60.

Conference Proceedings
Conference Proceedings
60. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
Neudeck, P.G. ; Powell, J.A. ; Spry, D.J. ; Trunek, A.J. ; Huang, X. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M. ; Liu, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.213-216,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436