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Conference Proceedings

1. Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

Ivanov, P. A. ; Levinshtein, M. E. ; Mnatsakanov, T. T. ; Palmour, J. W. ; Singh, R. ; Irvin, K. G. ; Das, M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.973-976, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

2. Turn-On Process in High-Voltage 4H-SiC Thyristors

Dyakonova, N. V. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.211-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

3. 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

Irvine, K. G. ; Singh, R. ; Paisley, M. J. ; Palmour, J. W. ; Kordina, O. ; Carter, C. H., Jr.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.119-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

4. Characterization of thick 4H-SiC hot-wall CVD layers

Paisley, M. J. ; Irvine, K. G. ; Kordina, O. ; Singh, R. ; Palmour, J. W. ; Carter, C. H. Jr.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.167-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

5. High Temperature, High Current, 4H-SiC Accu-DMOSFET

Singh, R. ; Ryu, S. -H. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1271-1274, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Suvorov, A. V. ; Lipkin, L. A. ; Johnson, G. M. ; Singh, R. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1275-1278, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

7. Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V. ; Ivanov, P. A. ; Kozlov, V. A. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1319-1322, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

8. 6.2kV 4H-SiC pin Diode with Low Forward Voltage Drop

Sugawara, Y. ; Asano, K. ; Singh, R. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1371-1374, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, A. ; Ryu, S. -H. ; Singh, R. ; Kordina, O. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1387-1390, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation

Ryu, S. -H. ; Singh, R. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1427-1430, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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