1.

Conference Proceedings
Conference Proceedings
1. Behavior of W and WSix Contact Metallization on n- and P-Type GaN
Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Activation characteristics of donor and acceptor implants in GaN
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.513-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
5.

Conference Proceedings
Conference Proceedings
5. Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Mileham, J. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Hagerott-Crawford, M. ; Ren, F. ; Hobson, W. S. ; Zavada, J. M.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.115-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
6.

Conference Proceedings
Conference Proceedings
6. ULTRA-SMOOTH DRY ETCHING OF GaAs USING A HYDROGEN PLASMA PRETREATMENT
Shul, R. J. ; Choquette, Kent D. ; Howard, A. J. ; Rieger, D. J. ; DiRubio, C. A. ; Freund, R. S. ; Wetzel, R. C.
Pub. info.: Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.465-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 324
7.

Conference Proceedings
Conference Proceedings
7. Selective Etching of Wide-Bandgap Nitrides
Shul, R. J. ; Willison, C. G. ; Bridges, M. M. ; Han, J. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Donovan, S. M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.155-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
8.

Conference Proceedings
Conference Proceedings
8. In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Vawter, G. A. ; Shul, R. J. ; Bridges, M. M. ; Willison, C. G.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.191-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
9.

Conference Proceedings
Conference Proceedings
9. Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
Maeda, T. ; Lee, J. W. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Constantine, C. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.209-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
10.

Conference Proceedings
Conference Proceedings
10. ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2
Shul, R. J. ; Baca, A. G. ; Rieger, D. J. ; Hou, H. ; Pearton, S. J. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.245-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
11.

Conference Proceedings
Conference Proceedings
11. Properties of H, O and C in GaN
Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
12.

Conference Proceedings
Conference Proceedings
12. Comparison of ICI and Ibr for Dry Etching of III-Nitrides
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Shul, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1023-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
13.

Conference Proceedings
Conference Proceedings
13. Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN
Pearton, S. J. ; Vartuli, C. B. ; Lee, J. W. ; Donovan, S. M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Shul, R. J. ; McLane, G. F. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.309-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
14.

Conference Proceedings
Conference Proceedings
14. Chemical Etching of AlN and InAlN in KOH Solutions
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Shul, R. J. ; Ren, F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1017-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
15.

Conference Proceedings
Conference Proceedings
15. Chlorine-Based Plasma Etching of GaN
Shul, R. J. ; Briggs, R. D. ; Pearton, S. J. ; Vartuli, C. B. ; Abernathy, C. R. ; Lee, J. W. ; Constantine, C. ; Barratt, C.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.969-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
16.

Conference Proceedings
Conference Proceedings
16. Complementary HFET Technology for Low-Power Mixed-Mode Applications
Baca, A. G. ; Sherwin, M. E. ; Zolper, J. C. ; Dubbert, D. F. ; Hietala, V. M. ; Shul, R. J. ; Sloan, L. R. ; Hafich, M. J.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.227-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
17.

Conference Proceedings
Conference Proceedings
17. Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN
Cho, Hyun ; Maeda, T. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Han, J. ; Ren, F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.501-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
18.

Conference Proceedings
Conference Proceedings
18. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
19.

Conference Proceedings
Conference Proceedings
19. GaN Etching in BCl3/Cl2 Plasmas
Shul, R. J. ; Ashby, C. I. H. ; Willison, C. G. ; Zhang, L. ; Han, J. ; Bridges, M. M. ; Pearton, S. J. ; Lee, J. W. ; Lester, L. F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.487-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
20.

Conference Proceedings
Conference Proceedings
20. Comparison of Dry-Etch Techniques for GaN, InN, and AlN
Shul, R. J. ; Vawter, G. A. ; Willison, C. G. ; Bridges, M. M. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.103-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
21.

Conference Proceedings
Conference Proceedings
21. High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Crawford, M. Hagerott ; Howard, A. J. ; Parmeter, J. E.
Pub. info.: Materials - fabrication and patterning at the nanoscale : Symposium held April 19-20, 1995, San Francisco, California, USA.  pp.37-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 380
22.

Conference Proceedings
Conference Proceedings
22. Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas
Shul, R. J. ; Zhang, L. ; Willison, C. G. ; Han, J. ; Pearton, S. J. ; Hong, J. ; Abernathy, C. R. ; Lester, L. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G8.1.1.-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
23.

Conference Proceedings
Conference Proceedings
23. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Han, J. ; Crawford, M. H. ; Shul, R. J. ; Hearne, S. J. ; Chason, E. ; Figiel, J. J. ; Banas, M.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G7.7.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
24.

Conference Proceedings
Conference Proceedings
24. Photoelectrochemical Etching of InxGa1-xN
Cho, H. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Han, J. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.40.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
25.

Conference Proceedings
Conference Proceedings
25. Repid Thermal Processing of Implanted GaN Up to 1500°C
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Abernathy, C. R. ; Han, J. ; Shul, R. J. ; Rieger, D. J. ; Zolper, J. C. ; Wilson, R. G. ; Fu, M. ; Sekhar, J. A. ; Guo, H. J. ; Pennycook, S. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
26.

Conference Proceedings
Conference Proceedings
26. ICP Dry Etching of III-V Nitrides
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Constantine, C. ; Barratt, C. ; Katz, A. ; Poyakov, A. Y. ; Shin, M. ; Skowronski, M.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.393-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
27.

Conference Proceedings
Conference Proceedings
27. Current Transport in W and Wsix Ohmic Contacts to InGaN and InN
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenizie, J. D. ; Lovejoy, M. L. ; Shul, R. J. ; Zolper, J. C. ; Baca, A. G. ; Hagerott-Crawford, M. ; Jones, K. A. ; Ren, F.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.413-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
28.

Conference Proceedings
Conference Proceedings
28. Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas
Shul, R. J. ; Briggs, R. D. ; Han, J. ; Pearton, S. J. ; Lee, J. W. ; Vartuli, C. B. ; Killeen, K. P. ; Ludowise, M. J.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.355-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
29.

Conference Proceedings
Conference Proceedings
29. Processing Challenges for GaN-Based Photonic and Electronic Devices
Pearton, S. J. ; Ren, F. ; Shul, R. J. ; Zolper, J. C. ; Katz, A.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.331-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
30.

Conference Proceedings
Conference Proceedings
30. Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
Cho, H. ; Hahn, Y. B. ; Hays, D. C. ; Jung, K. B. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.56.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
31.

Conference Proceedings
Conference Proceedings
31. W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Shul, R. J. ; Zolper, J. C. ; Lovejoy, M. L. ; Baca, A. G. ; Hagerott-Crawford, M.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.373-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
32.

Conference Proceedings
Conference Proceedings
32. Dry Etch Damage in InN, InGaN and InAlN
Pearton, S. J. ; Lee, J. W. ; MacKenzie, J. D. ; Vartuli, C. B. ; Donovan, S. M. ; Abernathy, C. R. ; Shul, R. J. ; Ren, F. ; Lothian, J. R.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.163-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
33.

Conference Proceedings
Conference Proceedings
33. Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source
Constantine, C. ; Johnson, D. ; Barratt, C. ; Shul, R. J. ; McClellan, G. B. ; Briggs, R. D. ; Rieger, D. J. ; Karlicek, R. F., Jr. ; Lee, J. W. ; Pearton, S. J.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.431-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
34.

Conference Proceedings
Conference Proceedings
34. Er-Doping of GaN and Related Alloys
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Schwartz, R. N. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J.
Pub. info.: Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.47-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 422
35.

Conference Proceedings
Conference Proceedings
35. Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas
Cho, Hyun ; Vartuli, C. B. ; Abernathy, C. R. ; Donovan, S. M. ; Pearton, S. J. ; Shul, R. J. ; Han, J.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.327-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
36.

Conference Proceedings
Conference Proceedings
36. Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges
Wang, J. J. ; Cho, Hyun ; Lambers, E. S. ; Pearton, S. J. ; Ostling, M. ; Zetterling, C-M. ; Grow, J. M. ; Ren, F. ; Shul, R. J. ; Han, J.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.507-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
37.

Conference Proceedings
Conference Proceedings
37. Dry Etching of III-V Nitrides
Pearton, S. J. ; Shul, R. J. ; McLane, G. F. ; Constantine, C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.717-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
38.

Conference Proceedings
Conference Proceedings
38. Role of C. O and H in III-Nitrides
Abernathy, C. R. ; Pearton, S. J. ; Mackenzie, J. D. ; Lee, J. W. ; Vartuli, C. B. ; Wilson, R. G. ; Shul, R. J. ; Zolper, J. C. ; Zavada, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.685-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
39.

Conference Proceedings
Conference Proceedings
39. Plasma Chemistry Dependent ECR Etching of GaN
Shul, R. J. ; Ashby, C. I. H. ; Rieger, D. J. ; Howard, A. J. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B. ; Barnes, P. A. ; Davis, P.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.751-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
40.

Conference Proceedings
Conference Proceedings
40. Calculations of the Specific Resistance of Contacts to III-V Nitride Compounds
Barnes, P. A. ; Zhang, X-J ; Lovejoy, M. L. ; Drummond, T. J. ; Hjalmarson, H. P. ; Crawford, M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.849-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
41.

Conference Proceedings
Conference Proceedings
41. Dielectrics for GaN-Based MIS Diodes
Ren, F. ; Abernathy, C. R. ; MacKenzie, J. D. ; Gila, B. P. ; Pearton, S. J. ; Hong, M. ; Macos, M. ; Schurman, M. J. ; Baca, A. G. ; Shul, R. J.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.443-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
42.

Conference Proceedings
Conference Proceedings
42. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
43.

Conference Proceedings
Conference Proceedings
43. Surface conversion effects in plasma-damaged p-GaN
Cao, X. A. ; Pearton, S. J. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Shul, R. J. ; Zhang, L. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
44.

Conference Proceedings
Conference Proceedings
44. In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in rf Hydrogen and Hydrogen/Methane/Argon Plasmas
Parmeter, J. E. ; Shul, R. J. ; Miller, P. A.
Pub. info.: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.309-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 386
45.

Conference Proceedings
Conference Proceedings
45. ECR PLASMA SYNTHESIS OF SILICON NITRIDE FILMS ON GaAs AND InSb
Barbour, J. C. ; Lovejoy, M. L. ; Ashby, C. I. H. ; Howard, A. J. ; Custer, J. S. ; Shul, R. J.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.899-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
46.

Conference Proceedings
Conference Proceedings
46. Fabrication and characterization of GaN junction field effect transistors
Zhang, L. ; Lester, L. F. ; Baca, A. G. ; Shul, R. J. ; Chang, P. C. ; Willison, C. G. ; Mishra, U. K. ; DenBaars, S. P. ; Zolper, J. C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W4.9.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
47.

Conference Proceedings
Conference Proceedings
47. Hydrogen Diffusion and Passivation in InGaAlN Alloys
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Vartuli, C. B. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.497-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378