1.

Conference Proceedings
Conference Proceedings
1. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances
Pantelides, S.T. ; Wang, S. ; Franceschetti, A. ; Buczko, R. ; Di Ventra, M. ; Rashkeev, S.N. ; Tsetseris, L. ; Evans, M.H. ; Batyrev, I.G. ; Feldman, L.C. ; Dhar, S. ; McDonald, K. ; Weller, R.A. ; Schrimpf, R.D. ; Fleetwood, D.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.935-948,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Dipoles in SiO2: Border Traps or Not?
Fleetwood, D.M. ; Rashkeev, S.N. ; Lu, Z.Y. ; Nicklaw, CJ. ; Felix, JA. ; Schrimpf, R.D. ; Pantelides, S.T.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.291-307,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
3.

Conference Proceedings
Conference Proceedings
3. Recent radiation issues in silicon-on-insulator devices
Alles, M.L. ; Ball, D.R. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Reed, R.A. ; Jun, B.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.87-98,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
4.

Conference Proceedings
Conference Proceedings
4. Investigation of second-harmonic generation for SOI wafer metrology
Pasternak, R. ; Jun, B. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Alles, M.A. ; Dolan, R.P. ; Standley, R.W. ; Tolk, N.H.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.383-388,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
5.

Conference Proceedings
Conference Proceedings
5. Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics
Fleetwood, D.M. ; Zhou, X.J. ; Tsetseris, L. ; Pantelides, S.T. ; Schrimpf, R.D.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.267-278,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
6.

Conference Proceedings
Conference Proceedings
6. Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs
Cirba, C.R. ; Cristoloveanu, S. ; Schrimpf, R.D. ; Feldman, L.C. ; Fleetwood, D.M. ; Galloway, K.F.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.493-498,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5