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45 results

Conference Proceedings

1. Red surface emitters: powerful and fast

Schweizer, H. ; Ballmann, T. ; Butendeich, R. ; Rossbach, R. ; Raabe, B. ; Jetter, M. ; Scholz, F.

Pub. info.:	Semiconductor optoelectronic devices for lightwave communication :8-10 September 2003, Orlando, Florida, USA. pp.103-116, 2003. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5248

Conference Proceedings

2. Nanometer Structures for Optics

Schweizer, H. ; Griesinger, U. ; Gauggel, H.P. ; Hofmann, R. ; Wang, J. ; Lichtenstein, N. ; Burkard, M. ; Kuhn, J. ; Geng, C. ; Geiger, M. ; Off, J. ; Scholz, F.

Pub. info.:	Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors. pp.210-239, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-2

Conference Proceedings

3. NEW GROUP III PRECURSORS FOR THE MOVPE OF GaAs AND InP BASED MATERIAL

Hostalek, M. ; Pohl, L. ; Brauers, A. ; Balk, P. ; Frese, V. ; Hardtdegen, H. ; Hovel, R. ; Regel, G. K. ; Molassioti, A. ; Moser, M. ; Scholz, F. ; Schumann, H. ; Hartmann, K. U,. ; Wassermann, W.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.205-210, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

4. Effects of Birefringence in Ordered GaInP/AlGaInP Lasers

Moritz, A. ; Wirth, R. ; Geng, C. ; Scholz, F. ; Hangleiter, A.

Pub. info.:	Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. .. pp.97-, 1996. Pittsburgh, Pennsylvania.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	417

Conference Proceedings

5. OPTICAL AND CYCLOTRON RESONANCE INVESTIGATIONS ON GaInP/GaAs EPITAXIAL LAYERS

Emanuelsson, P. ; Drechsler, M. ; Hofmann, D. M. ; Meyer, B. K. ; Moser, M. ; Scholz, F.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.543-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

Conference Proceedings

6. DEFECT REDUCTION BY THERMAL CYCLIC GROWTH IN GaAs GROWN ON Si BY MOVPE

Kurner, W. ; Dieter, R. ; Zieger, K. ; Goroncy, F. ; Dornen, A. ; Scholz, F.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.437-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

7. OPTICAL INVESTIGATION OF STRAINED-LAYER GaInAs/GaInAsP HETEROSTRUCTURES

Queisser, I. ; Harle, V. ; Dornen, A. ; Scholz, F.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.507-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

8. Mechanisms of Strain Reduction in GaN and AlGaN/GaN Epitaxial Layers

Gfrorer, O. ; Schlusener, T. ; Harle, V. ; Scholz, F. ; Hangleiter, A.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.429-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and raman spectroscopy

Schubert, M. ; Kasic, A. ; Tiwald, T. E. ; Woollam, J. A. ; Harle, V. ; Scholz, F.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.39.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

10.

Conference Proceedings

10. Excitation and de-excitation mechanisms of rare-earth ions in III-V compounds: optically detected microwave-induced impact ionization of Yb dopant in InP

Gregorkiewicz, T. ; Liesert, B. J. Heijmink ; Tsimperidis, I. ; Matt-Gersdorf, I. De ; Ammerlaan, C. A. J. ; Godlewski, M. ; Scholz, F.

Pub. info.:	Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A.. pp.239-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	301

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