1.

Conference Proceedings
Conference Proceedings
1. OPTICAL INVESTIGATION OF STRAINED-LAYER GaInAs/GaInAsP HETEROSTRUCTURES
Queisser, I. ; Harle, V. ; Dornen, A. ; Scholz, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.507-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
2.

Conference Proceedings
Conference Proceedings
2. Mechanisms of Strain Reduction in GaN and AlGaN/GaN Epitaxial Layers
Gfrorer, O. ; Schlusener, T. ; Harle, V. ; Scholz, F. ; Hangleiter, A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.429-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and raman spectroscopy
Schubert, M. ; Kasic, A. ; Tiwald, T. E. ; Woollam, J. A. ; Harle, V. ; Scholz, F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.39.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Metalorganic Vapor-Phase-Epitaxial Growth of GaInN/GaN Heterostructures and Quantum Wells
Scholz, F. ; Harle, V. ; Steuber, F. ; Sohmer, A. ; Bolay, H. ; Syganow, V. ; Dornen, A. ; Im, J-S. ; Hangleiter, A. ; Duboz, J-Y. ; Galtier, P. ; Rosencher, E. ; Ambacher, O. ; Brunner, D. ; Lakner, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.3-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. DLTS and CV Analysis of Doped and N-Implanted GaN
Haase, D. ; Schmid, M. ; Dornen, A. ; Harle, V. ; Bolay, H. ; Scholz, F. ; Burkard, M. ; Schweizer, H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.531-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
6.

Conference Proceedings
Conference Proceedings
6. Influence of Exciton Ionization on Recombination Dynamics in InGaAs/InP Quantum Wells
Michler, P. ; Hangleiter, A. ; Moritz, A. ; Harle, V. ; Streubel, K. ; Scholz, F.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.220-226,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
7.

Conference Proceedings
Conference Proceedings
7. Yellow Luminescence and Associated ODMR in MOVPE GaN: A Comparison of Defect Models
Mason, P. W. ; Dornen, A. ; Harle, V. ; Scholz, F. ; Watkins, G. D.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.793-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire
Hangleiter, A. ; Im, J. S. ; Forner, T. ; Harle, V. ; Scholz, F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.559-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
9.

Conference Proceedings
Conference Proceedings
9. Spontaneous and Stimulated Recombination in the Nitrides
Hangleiter, A. ; Scholz, F. ; Harle, V. ; Im, J-S. ; Frankowsky, G.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.641-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
10.

Conference Proceedings
Conference Proceedings
10. Influence of Surface Defects on the Characteristics of GaN Schottky Diodes
Duboz, J-Y. ; Binet, F. ; Laurent, N. ; Rosencher, E. ; Scholz, F. ; Harle, V. ; Briot, O. ; Gil, B. ; Aulombard, R. L.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1085-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449