1.

Conference Proceedings
Conference Proceedings
1. Effects of Birefringence in Ordered GaInP/AlGaInP Lasers
Moritz, A. ; Wirth, R. ; Geng, C. ; Scholz, F. ; Hangleiter, A.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.97-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
2.

Conference Proceedings
Conference Proceedings
2. Mechanisms of Strain Reduction in GaN and AlGaN/GaN Epitaxial Layers
Gfrorer, O. ; Schlusener, T. ; Harle, V. ; Scholz, F. ; Hangleiter, A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.429-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Im. J. S. ; Kollmer, H. ; Gfrorer, O. ; Off, J. ; Scholz, F. ; Hangleiter, A.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.20.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Metalorganic Vapor-Phase-Epitaxial Growth of GaInN/GaN Heterostructures and Quantum Wells
Scholz, F. ; Harle, V. ; Steuber, F. ; Sohmer, A. ; Bolay, H. ; Syganow, V. ; Dornen, A. ; Im, J-S. ; Hangleiter, A. ; Duboz, J-Y. ; Galtier, P. ; Rosencher, E. ; Ambacher, O. ; Brunner, D. ; Lakner, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.3-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. Sign of the piezoelectric field in asymmetric GaInN/AlGaN/GaN single and double quantum wells on SiC
Im, J. S. ; Hangleiter, A. ; Off, J. ; Scholz, F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.28.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
6.

Conference Proceedings
Conference Proceedings
6. Effects of Piezoelectric Fields in GalnN/GaN and GaN/AlGaN Heterostructures and Quantum Wells
Im, Jin Seo ; Kollmer, H. ; Off, J. ; Sohmer, A. ; Scholz, F. ; Hangleiter, A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.513-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
7.

Conference Proceedings
Conference Proceedings
7. Influence of Exciton Ionization on Recombination Dynamics in InGaAs/InP Quantum Wells
Michler, P. ; Hangleiter, A. ; Moritz, A. ; Harle, V. ; Streubel, K. ; Scholz, F.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.220-226,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
8.

Conference Proceedings
Conference Proceedings
8. Quantum dot lasers
Schweizer, H. ; Wang, J. ; Griesinger, U. ; Burkard, M. ; Porsche, J. ; Geiger, M. ; Scholz, F. ; Riedl, T. ; Hangleiter, A.
Pub. info.: Frontiers of Nano-Optoelectronic Systems.  pp.65-84,  2000.  Dordrecht, MA.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 6
9.

Conference Proceedings
Conference Proceedings
9. Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire
Hangleiter, A. ; Im, J. S. ; Forner, T. ; Harle, V. ; Scholz, F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.559-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
10.

Conference Proceedings
Conference Proceedings
10. Spontaneous and Stimulated Recombination in the Nitrides
Hangleiter, A. ; Scholz, F. ; Harle, V. ; Im, J-S. ; Frankowsky, G.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.641-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449