1.

Conference Proceedings
Conference Proceedings
1. Status of Nitride-Based Light-Emitting and Laser Diodes on SiC
Doverspike, K. ; Bulman, G. E. ; Sheppard, S. T. ; Kong, H. S. ; Leonard, M. ; Dieringer, H. ; Weeks, T. W., Jr. ; Edmond, J. ; Brown, J. D. ; Swindle, J. T. ; Schetzina, J. F. ; Song, Y-K. ; Kuball, M. ; Nurmikko, A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1169-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. The First Nitride Laser Diode on Silicon Carbide
Brown, J. D. ; Swindell, J. T. ; Johnson, M. A. L. ; Yu, Zhonghai ; Schetzina, J. F. ; Bulman, G. E. ; Doverspike, K. ; Sheppard, S. T. ; Weeks, T. W. ; Leonard, M. ; Kong, H. S. ; Dieringer, H. ; Carter, C. ; Edmond, J. A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1179-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
Yu, Z. ; Johnson, M. A. L. ; Brown, J. D. ; El-Masry, N. A. ; Muth, J. F. ; Cook, J. W., Jr. ; Schetzina, J. F. ; Haberern, K. W. ; Kong, H. S. ; Edmond, J. A.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.3.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
Muth, J. F. ; Brown, J. D. ; Johnson, M. A. L. ; Yu, Z. ; Kolbas, R. M. ; Cook, J. W., Jr. ; Schetzina, J. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
Johnson, M. A. L. ; Yu, Z. ; Brown, J. D. ; Koeck, F. A. ; El-Masry, N. A. ; Kong, H. S. ; Edmond, J. A. ; Cook, J. W., Jr. ; Schetzina, J. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.10.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. High-sensitivity visible-blend AlGaN photodiodes and photodiode arrays
Brown, J. D. ; Matthews, J. ; Harney, S. ; Boney, J. ; Schetzina, J. F. ; Benson, J. D. ; Dang, K. V. ; Nohava, T. ; Yang, W. ; Krishnankutty, S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W1.9.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595