1.

Conference Proceedings
Conference Proceedings
1. A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
Brosselard, P. ; Bouchet, T. ; Planson, D. ; Scharnholz, S. ; Paques, G. ; Lazar, M. ; Raynaud, C. ; Chante, J. P. ; Spahn, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1005-1008,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Fabrication and Characterisation of High-Voltage SiC-Thyristors
Zorngiebel, V. ; Scharnholz, S. ; Spahn, E. ; Brosselard, P. ; Arssi, N. ; Chante, J.-P. ; Planson, D. ; Raynaud, C. ; Spangenberg, B. ; Kurz, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.883-886,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
Brosselard, P. ; Zorngiebel, V. ; Planson, D. ; Scharnholz, S. ; Chante, J.P. ; Spahn, E. ; Raynaud, C. ; Lazar, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1129-1132,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460