1.

Conference Proceedings
Conference Proceedings
1. Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)
Satoh, M. ; Suzuki, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.799-802,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures
Satoh, M. ; Suzuki, T. ; Miyagawa, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.791-794,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiC
Satoh, M. ; Matsuo, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.923-926,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Relationship between atmospheric hydrologic substances and aerosol column number
Mukai, S. ; Sano, I. ; Okada, Y. ; Satoh, M.
Pub. info.: Remote sensing of clouds and the atmosphere VIII : 9-12 September 2003, Barcelona, Spain.  pp.559-566,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5235
5.

Conference Proceedings
Conference Proceedings
5. Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
Shibagaki, M. ; Kurematsu, Y. ; Watanabe, F. ; Haga, S. ; Miura, K. ; Suzuki, T. ; Satoh, M.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.609-612,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Development of high-speed laser soldering process for lead-free solder with diode laser
Wang, J. ; Watanabe, M. ; Goto, Y. ; Fujii, K. ; Kuriaki, H. ; Satoh, M. ; Ikeda, J. ; Fujimoto, K.
Pub. info.: First International Symposium on High-Power Laser Macroprocessing : 27-31 May 2002, Osaka, Japan.  pp.26-31,  2003.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4831
7.

Conference Proceedings
Conference Proceedings
7. Thermally Stabilized Polyaniline with m-Xylylenedisulfonic Acid and its Application for a Counter Electrode of a Tantalum Capacitor
Ishikawa, H. ; Yageta, H. ; Amano, K. ; Satoh, M. ; Hasegawa, E.
Pub. info.: Electrical, optical, and magnetic properties of organic solid state materials III : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.559-,  1996.  Pittsburgh, Pennsylvania.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 413
8.

Conference Proceedings
Conference Proceedings
8. Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.773-778,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Plasma Oxidation of SiC at Low Temperatures (below 300oC)
Satoh, M. ; Shimada, H. ; Nakamura, T. ; Nagamoto, N. ; Yanagihara, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1105-1108,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
Nakamura, T. ; Matsumoto, S. ; Horibe, T. ; Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.839-842,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. NiSi2 Ohmic Contact to n-Type 4H-SiC
Nakamura, T. ; Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.889-892,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Characterization of Implantation Layer in (1100) Oriented 4H- and 6H-SiC
Satoh, M. ; Nakaike, Y. ; Uchimura, K. ; Kuriyama, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.905-908,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
14.

Conference Proceedings
Conference Proceedings
14. Ohmic Contact Formation on n-Type 6H-SiC using NiSi2
Nakamura, T. ; Shimada, H. ; Satoh, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.985-988,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
15.

Conference Proceedings
Conference Proceedings
15. NiSi2 Ohmic Contact to n-Type 4H-SiC
Nakamura, T. ; Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.889-892,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
Nakamura, T. ; Matsumoto, S. ; Horibe, T. ; Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.839-842,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Plasma Oxidation of SiC at Low Temperatures (below 300oC)
Satoh, M. ; Shimada, H. ; Nakamura, T. ; Nagamoto, N. ; Yanagihara, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1105-1108,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
19.

Conference Proceedings
Conference Proceedings
19. Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
Satoh, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.773-778,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Technical Paper
Technical Paper
20. Material evaluation of large single crystal and directionally solidified bucket castings for advanced land-based gas turbines
Yamamoto, H. ; Yamamoto, M. ; Imai, K. ; Miyazaki, M. ; Satoh, M. ; Kobayashi, Y. ; Matsuzaki, H.
Pub. info.: A.S.M.E. paper.  1995.  New York.  The American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 1995
21.

Technical Paper
Technical Paper
21. Examination of Conversion of C3H8 into C3H6 by Electric Discharge Palsma Treatment for Lean-Burn Engines.
Kurahashi, M. ; Shiraga, S. ; Satoh, M.
Pub. info.: 2007 SAE world congress : technical paper.  2007.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2007