1.

Conference Proceedings
Conference Proceedings
1. 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
Saitoh, H. ; Kimoto, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.89-92,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
Saitoh, H. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.185-188,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Saitoh, H. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.997-1000,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. EpitaxiaI Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
Saitoh, H. ; Manabe, A. ; Kimoto, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.223-226,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529