1.

Conference Proceedings
Conference Proceedings
1. Selenium and Tellurium Double Donors in SiC
S.A. Reshanov ; H.B. Weber ; G. Pensl ; A. Schoener ; H. Nagasawa
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.607-610,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
A.Z. Zhang ; S.A. Reshanov ; A. Schöner ; W. Kaplan ; N. Kwietniewski
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.549-552,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes
J.K. Lim ; S.A. Reshanov ; W. Kaplan ; A. Zhang ; T. Hjort
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.600-603,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
H.R. Rossmann ; U. Gysin ; A. Bubendorf ; T. Glatzel ; S.A. Reshanov
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.497-500,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
S. Hishiki ; S.A. Reshanov ; T. Ohshima ; H. Itoh ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.703-706,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Lifetime Investigations of 4H-SiC PiN Power Diodes
S.A. Reshanov ; W. Bartsch ; B. Zippelius ; G. Pensl
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.699-702,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
N. Hatta ; T. Kawahara ; K. Yagi ; H. Nagasawa ; S.A. Reshanov
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.173-176,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.480-483,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
9.

Conference Proceedings
Conference Proceedings
9. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.508-511,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
10.

Conference Proceedings
Conference Proceedings
10. 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
J. Lorenzzi ; R. Esteve ; N. Jegenyes ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.433-436,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
11.

Conference Proceedings
Conference Proceedings
11. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
S.A. Reshanov ; G. Pensl ; K. Danno ; T. Kimoto ; S. Hishiki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.417-420,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
12.

Conference Proceedings
Conference Proceedings
12. A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors
J.K. Lim ; L. Östlund ; Q. Wang ; W. Kaplan ; S.A. Reshanov
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1207-1210,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
13.

Conference Proceedings
Conference Proceedings
13. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
S.A. Reshanov ; S. Beljakowa ; B. Zippelius ; G. Pensl ; K. Danno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.423-426,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
14.

Conference Proceedings
Conference Proceedings
14. Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.439-442,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
15.

Conference Proceedings
Conference Proceedings
15. Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
S. Beljakowa ; S.A. Reshanov ; B. Zippelius ; M. Krieger ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.427-430,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
16.

Conference Proceedings
Conference Proceedings
16. (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
G. Pensl ; F. Schmid ; S.A. Reshanov ; H.B. Weber ; M. Bockstedte ; A. Mattausch ; O. Pankratov ; T. Ohshima ; H. Itoh
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.307-312,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
17.

Conference Proceedings
Conference Proceedings
17. High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer
S.A. Reshanov ; S. Beljakowa ; T. Frank ; B. Zippelius ; M. Krieger
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.765-768,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
18.

Conference Proceedings
Conference Proceedings
18. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
A.I. Mikhaylov ; S.A. Reshanov ; A. Schöner ; A.V. Afanasyev ; V.V. Luchinin
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.651-654,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
19.

Conference Proceedings
Conference Proceedings
19. Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
R. Esteve ; A. Schöner ; S.A. Reshanov ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.829-832,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
20.

Conference Proceedings
Conference Proceedings
20. Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices
R. Esteve ; A. Schöner ; S.A. Reshanov ; C.-M. Zetterling
Pub. info.: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  pp.115-120,  2010.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1246
21.

Conference Proceedings
Conference Proceedings
21. Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
A.V. Afanasyev ; V.A. Ilyin ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner ; K.A. Sergushichev ; A.A. Smirnov
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.614-617,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
22.

Conference Proceedings
Conference Proceedings
22. Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
H. Elahipanah ; N. Thierry-Jebali ; S.A. Reshanov ; W. Kaplan ; A. Zhang ; J.K. Lim ; M. Bakowski ; M. Östling ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.455-458,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897