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10 results

Conference Proceedings

1. Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

A.Z. Zhang ; S.A. Reshanov ; A. Schöner ; W. Kaplan ; N. Kwietniewski

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.549-552, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

2. Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces

A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.480-483, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer

A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.508-511, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. 3C-SiC MOS Based Devices: From Material Growth to Device Characterization

J. Lorenzzi ; R. Esteve ; N. Jegenyes ; S.A. Reshanov ; A. Schöner

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.433-436, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons

M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.439-442, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

6. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere

A.I. Mikhaylov ; S.A. Reshanov ; A. Schöner ; A.V. Afanasyev ; V.V. Luchinin

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.651-654, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

7. Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

R. Esteve ; A. Schöner ; S.A. Reshanov ; C.M. Zetterling

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.829-832, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

R. Esteve ; A. Schöner ; S.A. Reshanov ; C.-M. Zetterling

Pub. info.:	Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California. pp.115-120, 2010. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1246

Conference Proceedings

9. Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

A.V. Afanasyev ; V.A. Ilyin ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner ; K.A. Sergushichev ; A.A. Smirnov

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.614-617, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Conference Proceedings

10. Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

H. Elahipanah ; N. Thierry-Jebali ; S.A. Reshanov ; W. Kaplan ; A. Zhang ; J.K. Lim ; M. Bakowski ; M. Östling ; A. Schöner

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.455-458, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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