GaAs and AlGaAs reactive ion etching in SiCl4/Ar gas mixtures for HEMT applications

GaAs and AlGaAs reactive ion etching in SiCl4/Ar gas mixtures for HEMT applications

Author(s):

Publication title:

Microelectronics Technology and Devices : SBMICRO 2007

Title of ser.:

ECS transactions

Ser. no.:

9(1)

Pub. Year:

2007

Page(from):

169

Page(to):

178

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775656 [1566775655]

Language:

English

Call no.:

E23400/9-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047130
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Microelectronics Technology and Devices : SBMicro
Conf. info. (Number):	22nd : 2007
Conf. info. (Venue):	Rio deJaneiro, Brazil
Conf. info. (Date):	2007.09.03-2007.09.06

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