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Conference Proceedings

1. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, M.K. ; Lipkin, L.A. ; Palmour, J. ; Saks, N. ; Williams, J.R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1195-1198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, Mrinal K. ; Lipkin, L.A. ; Palmour, J.W. ; Saks, N. ; Williams, J.R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1195-1198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393