1.

Conference Proceedings
Conference Proceedings
1. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
4.

Conference Proceedings
Conference Proceedings
4. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2