1.

Conference Proceedings
Conference Proceedings
1. Theoretical Studies of Vanadium Impurity in β-SiC
Tairov, Y.M. ; Reshanov, S.A. ; Parfenova, I.I. ; Yuryeva, E.I. ; Ivanovskii, A.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.577-580,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
Reshanov, S.A. ; Schneider, K. ; Helbig, R. ; Pensl, G. ; Nagasawa, H. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.513-516,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
von Bardeleben, H.J. ; Cantin, J.L. ; Reshanov, S.A. ; Rastegaev, V.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.507-510,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
4.

Conference Proceedings
Conference Proceedings
4. Electrical and Optical Characterization of SiC
Pensl, G. ; Schmid, F. ; Ciobanu, F. ; Laube, M. ; Reshanov, S.A. ; Schulze, N. ; Semmelroth, K. ; Nagasawa, H. ; Schoner, A. ; Wagner, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.365-370,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
Reshanov, S.A. ; Klettke, O. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.379-382,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Reshanov, S.A. ; Klettke, O. ; Pensl, G. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.459-462,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Theoretical Studies of Vanadium Impurity in β-SiC
Tairov, Y.M. ; Reshanov, S.A. ; Parfenova, I.I. ; Yuryeva, E.I. ; Ivanovskii, A.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.577-580,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. A Simple Model of 3d Impurities in Cubic Silicon Carbide
Parfenova, I.I. ; Yuryeva, E.I. ; Reshanov, S.A. ; Rastegaev, V.P. ; Ivanovskii, A.L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.515-518,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Reshanov, S.A. ; Rastegaev, V.P. ; Tairov, Yuri M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.53-56,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356